P Channel MOSFET ElecSuper EST03P06 suitable for power switching and DC DC conversion applications
Key Attributes
Model Number:
EST03P06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3.1A
RDS(on):
131mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Output Capacitance(Coss):
60pF
Input Capacitance(Ciss):
290pF
Pd - Power Dissipation:
1.71W
Gate Charge(Qg):
4.92nC@10V
Mfr. Part #:
EST03P06
Package:
SOT-23-3L
Product Description
EST03P06 SuperMOS P-Channel MOSFET
The EST03P06 is a P-Channel enhancement mode MOSFET utilizing advanced shielded gate trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This device is designed for fast switching, high density cell structure for low RDS(on), and is avalanche rated with low leakage current.
Product Attributes
- Brand: ElecSuper
- Product Line: SuperMOS
- Package: SOT-23-3L
- Material: Halogen free, Pb-free
- Certifications: UL 94V-0
- Origin: Copyright ElecSuper Incorporated
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit |
| Absolute Maximum Ratings & Thermal Characteristics | ||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=-250uA | -60 | V |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | TA=25°C | -3.1 | A |
| Continuous Drain Current | ID | TA=100°C | -1.86 | A |
| Maximum Power Dissipation | PD | TA=25°C | 1.71 | W |
| Pulsed Drain Current | IDM | a | -12.4 | A |
| Junction-to-Ambient Thermal Resistance | RθJA | b | 73 | °C/W |
| Operating Junction Temperature | TJ | -55 to +150 | °C | |
| Storage Temperature Range | Tstg | -55 to +150 | °C | |
| Electrical Characteristics | ||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -60 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V, VGS=0V | -1 | µA |
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA |
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.1 / -1.6 / -2.4 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-3A | 80 / 104 | mΩ |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-2A | 101 / 131 | mΩ |
| Input Capacitance | CISS | VGS=0V, VDS =-25V f=1MHz | 290 | pF |
| Output Capacitance | COSS | VGS=0V, VDS =-25V f=1MHz | 60 | pF |
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-25V f=1MHz | 5 | pF |
| Total Gate Charge | QG(TOT) | VGS=0 to -10V VDS=-30V, ID =-2A | 4.92 | nC |
| Gate-to-Source Charge | QGS | VGS=0 to -10V VDS=-30V, ID =-2A | 0.97 | nC |
| Gate-to-Drain Charge | QGD | VGS=0 to -10V VDS=-30V, ID =-2A | 0.72 | nC |
| Switching Characteristics | ||||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDD=-30V ID=-2A, RG=5Ω | 6.8 | ns |
| Rise Time | tr | VGS=-10V, VDD=-30V ID=-2A, RG=5Ω | 8 | ns |
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDD=-30V ID=-2A, RG=5Ω | 16 | ns |
| Fall Time | tf | VGS=-10V, VDD=-30V ID=-2A, RG=5Ω | 4 | ns |
| Body Diode Characteristics | ||||
| Forward Voltage | VSD | VGS=0V, IS=-3A | -1.2 | V |
2504101957_ElecSuper-EST03P06_C42434104.pdf
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