High cell density trench N channel MOSFET FETek FKBB3006 optimized for power conversion and low RDS
Key Attributes
Model Number:
FKBB3006
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
40A
RDS(on):
5.5mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
210pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.295nF@15V
Pd - Power Dissipation:
59W
Gate Charge(Qg):
20nC@4.5V
Mfr. Part #:
FKBB3006
Package:
PRPAK3X3
Product Description
Product Overview
The FKBB3006 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge, contributing to efficient power conversion. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability.
Product Attributes
- Brand: FETek Technology Corp.
- Product Type: N-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Device Available
- Key Features: 100% EAS Guaranteed, Super Low Gate Charge, Excellent CdV/dt effect decline, Advanced high cell density Trench technology
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| VDS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=20A | --- | 4.8 | 5.5 | m |
| VGS=4.5V , ID=10A | --- | 6.5 | 9 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=24V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=30A | --- | 43 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.7 | --- | |
| Qg | Total Gate Charge | VDS=15V , VGS=4.5V , ID=15A | --- | 20 | --- | nC |
| Qgs | Gate-Source Charge | --- | 7.6 | --- | ||
| Qgd | Gate-Drain Charge | --- | 7.2 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3 ID=15A | --- | 7.8 | --- | ns |
| Tr | Rise Time | --- | 15 | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 37.3 | --- | ||
| Tf | Fall Time | --- | 10.6 | --- | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 2295 | --- | pF |
| Coss | Output Capacitance | --- | 267 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 210 | --- | ||
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | --- | 40 | A |
| ISM | Pulsed Source Current | --- | --- | 140 | A | |
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | --- | --- | 1 | V |
| trr | Reverse Recovery Time | IF=20A , di/dt=100A/s , TJ=25 | --- | 14 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 5 | --- | nC |
2411220147_FETek-FKBB3006_C5361884.pdf
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