power MOSFET FETek FKS4115 P channel type featuring low gate charge and trench technology advantages
Key Attributes
Model Number:
FKS4115
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
8.7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
222pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.5nF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
28nC@4.5V
Mfr. Part #:
FKS4115
Package:
SOP-8
Product Description
Product Overview
The FKS4115 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDSON and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approved, featuring super low gate charge and excellent Cdv/dt effect decline due to its advanced trench technology.
Product Attributes
- Brand: FETek Technology Corp.
- Product Line: FKS4115
- Channel Type: P-Ch
- Certifications: RoHS, Green Product
- Special Features: 100% EAS Guaranteed, Super Low Gate Charge, Excellent CdV/dt effect decline
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
| VDS | Drain-Source Voltage | -40 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V1 | -8.7 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V1 | -7 | A | |||
| IDM | Pulsed Drain Current2 | -18 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 146 | mJ | |||
| IAS | Avalanche Current | -54 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 1.5 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 85 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 24 | /W | ||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250µA | -40 | --- | --- | V |
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.023 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-8A | --- | 13 | mΩ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-6A | --- | 20 | mΩ | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250µA | -1.0 | --- | -2.5 | V |
| ΔVGS(th) | VGS(th) Temperature Coefficient | 4.74 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-32V , VGS=0V , TJ=25 | --- | 1 | µA | |
| IDSS | Drain-Source Leakage Current | VDS=-32V , VGS=0V , TJ=55 | --- | 5 | µA | |
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=-5V , ID=-8A | 27 | S | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 7 | Ω | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-20V , VGS=-4.5V , ID=-6A | 28 | nC | ||
| Qgs | Gate-Source Charge | 7.7 | nC | |||
| Qgd | Gate-Drain Charge | 7.5 | nC | |||
| td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3Ω, ID=-1A | 40 | ns | ||
| tr | Rise Time | 35 | ns | |||
| td(off) | Turn-Off Delay Time | 100 | ns | |||
| tf | Fall Time | 9.6 | ns | |||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 3500 | pF | ||
| Coss | Output Capacitance | 323 | pF | |||
| Crss | Reverse Transfer Capacitance | 222 | pF | |||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | -8.7 | A | |
| ISM | Pulsed Source Current2,5 | --- | -18 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1 | V |
2411220410_FETek-FKS4115_C5361875.pdf
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