switching ElecSuper ESE01P30K P Channel MOSFET with trench technology and low leakage current rating
Key Attributes
Model Number:
ESE01P30K
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
35A
RDS(on):
45mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
130pF
Pd - Power Dissipation:
119W
Output Capacitance(Coss):
151pF
Input Capacitance(Ciss):
5nF
Gate Charge(Qg):
115nC@10V
Mfr. Part #:
ESE01P30K
Package:
TO-252
Product Description
Product Overview
The ESE01P30K is a P-Channel enhancement MOS Field Effect Transistor from ElecSuper, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering fast switching, high cell density for low RDS(on), and a reliable, rugged design with avalanche rating and low leakage current.
Product Attributes
- Brand: ElecSuper
- Product Name: SuperMOS
- Part Number: ESE01P30K
- Material: Halogen free, Pb-free
- Certifications: UL 94V-0
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Limit | Unit | Test Conditions |
| Drain-Source Voltage | BVDSS | -100 | V | VGS=0V, ID=-250uA |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current | ID | -35 | A | TC=25C |
| Continuous Drain Current | ID | -22 | A | TC=100C |
| Maximum Power Dissipation | PD | 119 | W | TC=25C |
| Pulsed Drain Current | IDM | -140 | A | |
| Avalanche Current, Single Pulsed | IAS | -28 | A | (L=0.4mH) |
| Avalanche Energy, Single Pulsed | EAS | 156.8 | mJ | a |
| Operating Junction Temperature | TJ | 150 | C | |
| Storage Temperature Range | Tstg | -55 to +150 | C | |
| Junction-to-Ambient Thermal Resistance | RJA | 55 | C/W | (t10s) |
| Junction-to-Case Thermal Resistance | RJC | 1.05 | C/W | |
| Drain-to-Source Breakdown Voltage | BVDSS | -100 | V | VGS=0V, ID=-250uA |
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VGS=0V, VDS=-100V, TJ=25 |
| Zero Gate Voltage Drain Current | IDSS | -100 | uA | VGS=0V, VDS=-100V, TJ=100 |
| Gate-to-source Leakage Current | IGSS | 100 | nA | VGS=20V, VDS=0V |
| Gate Threshold Voltage | VGS(TH) | -1.2 to -2.4 | V | VGS=VDS, ID=-250uA |
| Drain-to-source On-resistance | RDS(on) | 38 | m | VGS=-10V, ID=-20A, Typ. |
| Drain-to-source On-resistance | RDS(on) | 42 | m | VGS=-4.5V, ID=-10A, Typ. |
| Forward Transconductance | gFS | 44 | S | VDS=-10V, ID=-20A |
| Input Capacitance | CISS | 5000 | pF | VGS=0V, VDS =-50V, f=1MHz |
| Output Capacitance | COSS | 151 | pF | VGS=0V, VDS =-50V, f=1MHz |
| Reverse Transfer Capacitance | CRSS | 130 | pF | VGS=0V, VDS =-50V, f=1MHz |
| Total Gate Charge | QG(TOT) | 115 | nC | VGS=-10V, VDS=-50V, ID =-20A |
| Gate-to-Source Charge | QGS | 15 | nC | VGS=-10V, VDS=-50V, ID =-20A |
| Gate-to-Drain Charge | QGD | 14 | nC | VGS=-10V, VDS=-50V, ID =-20A |
| Turn-On Delay Time | td(ON) | 14.2 | ns | VGS=-10V, VDS=-50V, ID=-20A, RG=3 |
| Rise Time | tr | 38.9 | ns | VGS=-10V, VDS=-50V, ID=-20A, RG=3 |
| Turn-Off Delay Time | td(OFF) | 65 | ns | VGS=-10V, VDS=-50V, ID=-20A, RG=3 |
| Fall Time | tf | 37.5 | ns | VGS=-10V, VDS=-50V, ID=-20A, RG=3 |
| Forward Voltage | VSD | -1.2 | V | VGS=0V, ISD=-20A |
2504101957_ElecSuper-ESE01P30K_C42434097.pdf
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