rugged avalanche rated N channel MOSFET ElecSuper ESE0117K suitable for power switching applications
Key Attributes
Model Number:
ESE0117K
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
18A
RDS(on):
37mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
76pF@25V
Pd - Power Dissipation:
35W
Input Capacitance(Ciss):
1.982nF@25V
Gate Charge(Qg):
20nC@4.5V
Mfr. Part #:
ESE0117K
Package:
TO-252
Product Description
Product Overview
The ESE0117K is an N-Channel enhancement mode MOSFET designed using advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This device is reliable, rugged, and avalanche rated, with a low leakage current.
Product Attributes
- Brand: SuperMOS
- Part Number: ESE0117K
- Material: Halogen free, Pb-free
- Certifications: UL 94V-0
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | - | - | - | 100 | V |
| Gate-Source Voltage | VGS | - | - | - | ±20 | V |
| Continuous Drain Current | ID | TC=25℃ | - | - | 18 | A |
| Continuous Drain Current | ID | TC=75℃ | - | - | 14 | A |
| Maximum Power Dissipation | PD | - | - | - | 35 | W |
| Pulsed Drain Current | IDM | - | - | - | 72 | A |
| Operating Junction Temperature | TJ | - | - | - | 150 | ℃ |
| Lead Temperature | TL | - | - | - | 260 | ℃ |
| Storage Temperature Range | Tstg | - | -55 | - | 150 | ℃ |
| Junction-to-Case Thermal Resistance | RΘJC | Single Operation | - | 3.6 | - | ℃/W |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | - | 1 | - | uA |
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.5 | 2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=10A | - | 37 | 48 | mΩ |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=6A | - | 39 | 55 | mΩ |
| Forward transconductance | gfs | VDS=5V, ID=10A | - | 40 | - | S |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | - | 1982 | - | pF |
| Output Capacitance | COSS | - | - | 92 | - | pF |
| Reverse Transfer Capacitance | CRSS | - | - | 76 | - | pF |
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=80V, ID=10A | - | 20 | - | nC |
| Gate-to-Source Charge | QGS | - | - | 3.1 | - | nC |
| Gate-to-Drain Charge | QGD | - | - | 14 | - | nC |
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=80V, ID=10A, RG=3Ω | - | 12 | - | ns |
| Rise Time | tr | - | - | 93 | - | ns |
| Turn-Off Delay Time | td(OFF) | - | - | 40 | - | ns |
| Fall Time | tf | - | - | 72 | - | ns |
| Forward Voltage | VSD | VGS=0V, IS=10A | - | 1.5 | - | V |
2504101957_ElecSuper-ESE0117K_C42420881.pdf
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