252 package N channel MOSFET ElecSuper ES20N06 60V suitable for power switch DC DC conversion and charging
Key Attributes
Model Number:
ES20N06
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
RDS(on):
26mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
51pF
Number:
1 N-channel
Output Capacitance(Coss):
62pF
Input Capacitance(Ciss):
860pF
Pd - Power Dissipation:
25W
Gate Charge(Qg):
20.3nC@10V
Mfr. Part #:
ES20N06
Package:
TO-252
Product Description
SuperMOS TO-252 60V N-channel MOSFET
The ES20N06 is an N-Channel enhancement MOS Field Effect Transistor designed for DC-DC conversion, power switch, and charging circuits. It utilizes advanced technology to achieve excellent RDS(ON) with low gate charge, offering high density cell design for low on-resistance, reliability, and ruggedness. This device is avalanche rated and features low leakage current, making it suitable for PWM applications, load switches, and power management in portable/desktop PCs.
Product Attributes
- Brand: ElecSuper
- Model: ES20N06
- Package: TO-252
- Material: Halogen free
- Certifications: UL 94V-0
- Pb-free: Yes
Technical Specifications
| Parameter | Symbol | Limit | Unit | Test Conditions |
| Drain-Source Voltage | BVDSS | 60 | V | VGS=0V, ID=250uA |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 20 | A | TC=25°C |
| Continuous Drain Current | ID | 16 | A | TC=75°C |
| Maximum Power Dissipation | PD | 25 | W | |
| Pulsed Drain Current | IDM | 80 | A | |
| Avalanche Current, Single Pulsed | IAS | 16 | A | Tj=25°C,VDD=60V, VG=10V, L=0.3mH, Rg=25Ω |
| Avalanche Energy, Single Pulsed | EAS | 16 | mJ | Tj=25°C,VDD=60V, VG=10V, L=0.3mH, Rg=25Ω |
| Operating Junction Temperature | TJ | 150 | °C | |
| Lead Temperature | TL | 260 | °C | |
| Storage Temperature Range | Tstg | -55 to 150 | °C | |
| Junction-to-Case Thermal Resistance (Steady State) | RθJC | 5 | °C/W | |
| Gate Threshold Voltage | VGS(TH) | 1.0 - 2.5 | V | VGS=VDS, ID=250uA |
| Drain-to-source On-resistance | RDS(on) | 26 - 33 | mΩ | VGS=10V, ID=20A |
| Drain-to-source On-resistance | RDS(on) | 33 - 45 | mΩ | VGS=4.5V, ID=10A |
| Forward Transconductance | gFS | 40 | S | VDS=5.0V, ID=20A |
| Input Capacitance | CISS | 860 | pF | VGS=0V, f=1MHz, VDS=25V |
| Output Capacitance | COSS | 62 | pF | VGS=0V, f=1MHz, VDS=25V |
| Reverse Transfer Capacitance | CRSS | 51 | pF | VGS=0V, f=1MHz, VDS=25V |
| Total Gate Charge | QG(TOT) | 20.3 | nC | VGS=10V, VDS=30V, ID=10A |
| Gate-to-Source Charge | QGS | 3.8 | nC | VGS=10V, VDS=30V, ID=10A |
| Gate-to-Drain Charge | QGD | 5.5 | nC | VGS=10V, VDS=30V, ID=10A |
| Turn-On Delay Time | td(ON) | 6 | ns | VGS=10V, VDS=30V, ID=5A, RG=1.8Ω |
| Rise Time | tr | 6 | ns | VGS=10V, VDS=30V, ID=5A, RG=1.8Ω |
| Turn-Off Delay Time | td(OFF) | 19 | ns | VGS=10V, VDS=30V, ID=5A, RG=1.8Ω |
| Fall Time | tf | 3 | ns | VGS=10V, VDS=30V, ID=5A, RG=1.8Ω |
| Forward Voltage | VSD | 0.7 - 1.5 | V | VGS=0V, IS=10A |
2504101957_ElecSuper-ES20N06_C42385171.pdf
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