FMS Formosa Microsemi US1G Rectifier with Low Reverse Leakage and Automated Placement Friendly Design
Key Attributes
Model Number:
US1G
Product Custom Attributes
Mfr. Part #:
US1G
Package:
DO-214AC(SMA)
Product Description
Formosa MS US1A THRU US1M Surface Mount High Efficiency Rectifier
This series of 1.0A Surface Mount High Efficiency Rectifiers, ranging from 50V to 1000V, features ultra-fast switching for high efficiency. They are designed for surface mounted applications with low reverse leakage, built-in strain relief for automated placement, and high forward surge current capability. High temperature soldering is guaranteed at 250 C/10 seconds at terminals. The plastic package carries Underwriters Laboratory Flammability Classification 94V-0.
Product Attributes
- Brand: Formosa MS
- Origin: Taiwan (implied by FAX number format and company name)
- Material: Molded plastic body (JEDEC DO-214AC)
- Color: Not specified
- Certifications: Underwriters Laboratory Flammability Classification 94V-0, RoHS Directive 2011/65/EU
Technical Specifications
| Model | VRRM (V) | VRMS (V) | VR (V) | VF (V) @ IF=1.0A | trr (ns) @ IF=0.5A, IR=1.0A, IRR=0.25A | TJ (OC) |
| US1A | 50 | 35 | 50 | 1.0 | 50 | -55 to +125 |
| US1B | 100 | 70 | 100 | 1.0 | 50 | -55 to +125 |
| US1D | 200 | 140 | 200 | 1.0 | 50 | -55 to +125 |
| US1G | 400 | 280 | 400 | 1.0 | 100 | -55 to +125 |
| US1J | 600 | 420 | 600 | 1.0 | 200 | -55 to +125 |
| US1K | 800 | 560 | 800 | 1.0 | 400 | -55 to +125 |
| US1M | 1000 | 700 | 1000 | 1.0 | 600 | -55 to +125 |
Electrical Characteristics
| PARAMETER | CONDITIONS | Symbol | MIN. | TYP. | MAX. | UNIT |
| Forward rectified current | See Fig.2 8.3ms single half sine-wave (JEDEC methode) | IO | 50 | A | ||
| Forward surge current | 8.3ms single half sine-wave (JEDEC methode) | IFSM | 30 | A | ||
| Reverse current | VR = VRRM, TJ = 25 OC | IR | 1.0 | A | ||
| Reverse current | VR = VRRM, TJ = 100 OC | IR | 50 | A | ||
| Thermal resistance | Junction to ambient | RJA | 15 | OC/W | ||
| Diode junction capacitance | f=1MHz and applied 4V DC reverse voltage | CJ | 50 | pF | ||
| Storage temperature | TSTG | -65 | +125 | OC |
2410121452_FMS-Formosa-Microsemi-US1G_C163791.pdf
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