Power Switch N Channel MOSFET ElecSuper BSC0702LS ES with Low RDS ON and Gate Charge Characteristics
Key Attributes
Model Number:
BSC0702LS(ES)
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
190A
RDS(on):
3.4mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
135pF
Input Capacitance(Ciss):
5.44nF
Output Capacitance(Coss):
2.2nF
Pd - Power Dissipation:
156W
Gate Charge(Qg):
102nC@10V
Mfr. Part #:
BSC0702LS(ES)
Package:
PDFN5x6-8L
Product Description
Product Overview
The BSC0702LS(ES) is an N-Channel enhancement mode MOSFET utilizing advanced shielded gate trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Part Number: BSC0702LS(ES)
- Package: PDFN5*6-8L
- Material: Halogen free
- Certifications: UL 94V-0
- Testing: 100% UIS TESTED
Technical Specifications
| Parameter | Symbol | Conditions | Limit | Unit | ||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| VDS=60V, VGS=0V | 1 | uA | ||||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | 190 | A | ||
| TC=100°C | 95 | A | ||||
| Maximum Power Dissipation | PD | 156 | W | |||
| Pulsed Drain Current | IDM | 560 | A | |||
| Single Pulse Avalanche Current | IAS | Starting TJ=25C, VDD=30V, VG=10V, RG=25Ω, L=0.5mH | 35 | A | ||
| Single Pulse Avalanche Energy | EAS | Starting TJ=25C, VDD=30V, VG=10V, RG=25Ω, L=0.5mH | 306 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 to 150 | °C | |||
| Junction-to-Case Thermal Resistance | RθJC | 0.8 | °C/W | |||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.6 | 2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=30A | 1.9 | 2.5 | mΩ | |
| VGS=4.5V, ID=20A | 2.6 | 3.4 | mΩ | |||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 5440 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 2200 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 135 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDD=30V, ID=30A | 102 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDD=30V, ID=30A | 18 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDD=30V, ID=30A | 22 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=30V, ID=30A, RG=3Ω | 16 | ns | ||
| Rise Time | tr | VGS=10V, VDD=30V, ID=30A, RG=3Ω | 38 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDD=30V, ID=30A, RG=3Ω | 80 | ns | ||
| Fall Time | tf | VGS=10V, VDD=30V, ID=30A, RG=3Ω | 95 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=30A | 0.9 | 1.5 | V |
2504101957_ElecSuper-BSC0702LS-ES_C42434106.pdf
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