Low RDS ON N Channel MOSFET ElecSuper DMG1012T 7 ES ideal for DC DC converters and charging circuits
Key Attributes
Model Number:
DMG1012T-7(ES)
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
1.2A
RDS(on):
150mΩ@4.5V;200mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Output Capacitance(Coss):
22pF
Input Capacitance(Ciss):
60pF
Pd - Power Dissipation:
230mW
Gate Charge(Qg):
1nC@4.5V
Mfr. Part #:
DMG1012T-7(ES)
Package:
SOT-523
Product Description
Product Overview
The DMG1012T-7(ES) is an N-Channel enhancement mode MOS Field Effect Transistor from ElecSuper, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Product Code: DMG1012T-7(ES)
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=10V | 10 | uA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.4 | 0.65 | 1.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=0.5A | 150 | 165 | m | |
| VGS=2.5V, ID=0.3A | 200 | 300 | m | |||
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 60 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=10V | 22 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=10V | 12 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=0.9A | 1 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=0.9A | 0.28 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=0.9A | 0.22 | nC | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, ID=0.5A, RG=10 | 2 | ns | ||
| Rise Time | tr | VGS=4.5V, VDS=10V, ID=0.5A, RG=10 | 20 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=10V, ID=0.5A, RG=10 | 10 | ns | ||
| Fall Time | tf | VGS=4.5V, VDS=10V, ID=0.5A, RG=10 | 23 | ns | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, IS=0.9A | 1.5 | V | ||
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | TA=25C | 1.2 | A | ||
| TA=100C | 0.8 | A | ||||
| Maximum Power Dissipation | PD | 0.23 | W | |||
| Pulsed Drain Current | IDM | 4.8 | A | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Junction-to-Ambient Thermal Resistance (Single Operation, t 10s) | RJA | 543 | C/W | |||
2504101957_ElecSuper-DMG1012T-7-ES_C42412320.pdf
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