Power Switch MOSFET ElecSuper ESN6586 Featuring Pb Free Halogen Free Material and Trench Technology
Key Attributes
Model Number:
ESN6586
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
43A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7mΩ@10V;10.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
105pF
Number:
1 N-channel
Output Capacitance(Coss):
180pF
Input Capacitance(Ciss):
1.15nF
Pd - Power Dissipation:
42W
Gate Charge(Qg):
20nC@4.5V
Mfr. Part #:
ESN6586
Package:
PDFN5x6-8L
Product Description
Product Overview
The ESN6586 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and halogen-free.
Product Attributes
- Brand: ElecSuper
- Product Name: SuperMOS
- Model: ESN6586
- Material: Halogen free
- Certifications: UL 94V-0
- Lead Free: Pb-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | 43 | A | ||
| Continuous Drain Current | ID | TC=75°C | 33 | A | ||
| Maximum Power Dissipation | PD | TC=25°C | 42 | W | ||
| Maximum Power Dissipation | PD | TC=75°C | 25 | W | ||
| Pulsed Drain Current | IDM | a | 150 | A | ||
| Avalanche Current, Single Pulsed | IAS | b | 20 | A | ||
| Avalanche Energy, Single Pulsed | EAS | b | 60 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤ 10 s | 40 | °C/W | ||
| Junction-to-Case Thermal Resistance | RθJC | Steady State | 3 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.4 | 1.8 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 7 | 12 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=20A | 10.5 | 18 | mΩ | |
| Forward Transconductance | gFS | VDS=5.0V, ID=20A | 100 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | 1150 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=15V | 180 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=15V | 105 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=15V, ID=20A | 20 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=15V, ID=20A | 2.8 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=15V, ID=20A | 5 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=20V, RL=0.75Ω, RG=6Ω | 6.6 | ns | ||
| Rise Time | tr | VGS=10V, VDS=20V, RL=0.75Ω, RG=6Ω | 2 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=20V, RL=0.75Ω, RG=6Ω | 18 | ns | ||
| Fall Time | tf | VGS=10V, VDS=20V, RL=0.75Ω, RG=6Ω | 3.3 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=1.9A | 0.7 | 1.5 | V | |
2504101957_ElecSuper-ESN6586_C5224301.pdf
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