P Channel MOSFET ElecSuper SI2309CDS T1 GE3 ES Featuring Low RDS ON and Suitable for DC DC Conversion
Key Attributes
Model Number:
SI2309CDS-T1-GE3(ES)
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
1.8A
RDS(on):
155mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
23pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
533pF
Output Capacitance(Coss):
29pF
Gate Charge(Qg):
9.5nC@10V
Mfr. Part #:
SI2309CDS-T1-GE3(ES)
Package:
SOT-23-3
Product Description
Product Overview
The SI2309CDS-T1-GE3(ES) is a P-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering fast switching, high density cell design, and a reliable, rugged construction. This standard product is Pb-free and halogen-free.
Product Attributes
- Brand: ElecSuper
- Model: SI2309CDS-T1-GE3(ES)
- Package: SOT23-3L
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | -1.8 | A | ||
| Continuous Drain Current | ID | TA=100°C | -1.08 | A | ||
| Maximum Power Dissipation | PD | 1.2 | W | |||
| Pulsed Drain Current | IDM | -7.2 | A | |||
| Operating Junction Temperature | TJ | -55 | +150 | °C | ||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 104 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-60V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.1 | -1.6 | -2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-1.5A | 155 | 201 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-1A | 195 | 253 | mΩ | |
| Input Capacitance | CISS | VGS=0V, VDS =-25V, f=1MHz | 533 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-25V, f=1MHz | 29 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-25V, f=1MHz | 23 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=0 to -10V, VDS=-30V, ID=-1.5A | 9.5 | nC | ||
| Gate-to-Source Charge | QGS | VGS=0 to -10V, VDS=-30V, ID=-1.5A | 1.5 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=0 to -10V, VDS=-30V, ID=-1.5A | 2 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDD=-30V, ID=-1.5A, RG=3Ω | 45 | ns | ||
| Rise Time | tr | VGS=-10V, VDD=-30V, ID=-1.5A, RG=3Ω | 33 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDD=-30V, ID=-1.5A, RG=3Ω | 15 | ns | ||
| Fall Time | tf | VGS=-10V, VDD=-30V, ID=-1.5A, RG=3Ω | 11 | ns | ||
| Forward Voltage | VSD | VGS=0V, ISD=-1.5A | -1.2 | V | ||
2506121200_ElecSuper-SI2309CDS-T1-GE3-ES_C49108768.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
