Low Gate Charge N Channel MOSFET ElecSuper ES50N03D Suitable for DC DC Converters and Power Switches
Key Attributes
Model Number:
ES50N03D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
RDS(on):
13mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
120pF
Input Capacitance(Ciss):
1.25nF
Output Capacitance(Coss):
140pF
Pd - Power Dissipation:
39W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
ES50N03D
Package:
TO-252
Product Description
Product Overview
The ES50N03D is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Model: ES50N03D
- Material: Halogen free
- Certifications: UL 94V-0
- Packaging: Tape & Reel
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Limit/Typical | Unit | Conditions |
| Drain-Source Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 50 (TC=25°C), 30 (TC=100°C) | A | |
| Maximum Power Dissipation | PD | 39 | W | |
| Pulsed Drain Current | IDM | 200 | A | |
| Avalanche Energy, Single Pulsed | EAS | 56 | mJ | TJ=25°C,VDD=15V,VG=10V,L=0.5mH,Rg=25Ω,IAS=15A |
| Operating Junction Temperature | TJ | 150 | °C | |
| Lead Temperature | TL | 260 | °C | |
| Storage Temperature Range | Tstg | -55 to 150 | °C | |
| Junction-to-Case Thermal Resistance | RθJC | 3.2 (Typical) | °C/W | |
| Drain-to-Source Breakdown Voltage | BVDSS | 30 (Min.) | V | VGS=0V, ID=250uA |
| Zero Gate Voltage Drain Current | IDSS | 1 (Max.) | µA | VDS=30V, VGS=0V |
| Gate-to-source Leakage Current | IGSS | ±100 (Max.) | nA | VDS=0V, VGS=±20V |
| Gate Threshold Voltage | VGS(TH) | 1.0 (Min.), 1.6 (Typ.), 2.5 (Max.) | V | VGS=VDS, ID=250µA |
| Drain-to-source On-resistance | RDS(on) | 6.0 (Typ.) @VGS=10V, 9.8 (Typ.) @VGS=4.5V | mΩ | ID=20A, ID=10A respectively |
| Input Capacitance | CISS | 1250 (Typ.) | pF | VGS=0V, f=1MHz, VDS=15V |
| Output Capacitance | COSS | 140 (Typ.) | pF | VGS=0V, f=1MHz, VDS=15V |
| Reverse Transfer Capacitance | CRSS | 120 (Typ.) | pF | VGS=0V, f=1MHz, VDS=15V |
| Total Gate Charge | QG(TOT) | 23 (Typ.) | nC | VGS=10V, VDD=15V, ID=20A |
| Gate-to-Source Charge | QGS | 4.5 (Typ.) | nC | VGS=10V, VDD=15V, ID=20A |
| Gate-to-Drain Charge | QGD | 5.5 (Typ.) | nC | VGS=10V, VDD=15V, ID=20A |
| Turn-On Delay Time | td(ON) | 7 (Typ.) | ns | VGS=10V, VDS=15V, ID=15A, RG=3Ω |
| Rise Time | tr | 15 (Typ.) | ns | VGS=10V, VDS=15V, ID=15A, RG=3Ω |
| Turn-Off Delay Time | td(OFF) | 25 (Typ.) | ns | VGS=10V, VDS=15V, ID=15A, RG=3Ω |
| Fall Time | tf | 6 (Typ.) | ns | VGS=10V, VDS=15V, ID=15A, RG=3Ω |
| Forward Voltage | VSD | 1.2 (Typ.) | V | VGS=0V, IS=15A |
2509151929_ElecSuper-ES50N03D_C42434100.pdf
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