Power Management MOSFET ElecSuper ESJ8810 with Low Gate Charge and High Reliability in SOT 23 Package
Key Attributes
Model Number:
ESJ8810
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7.5A
RDS(on):
13mΩ@4.5V,6.5A
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
88pF@10V
Pd - Power Dissipation:
1.39W
Input Capacitance(Ciss):
1.3nF@10V
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
ESJ8810
Package:
SOT-23
Product Description
Product Overview
The ESJ8810 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications, offering high density cell design, reliability, and avalanche rating.
Product Attributes
- Brand: SuperMOS (ElecSuper)
- Package: SOT-23
- Material: Halogen free, Pb-free
- Certifications: UL 94V-0
- Origin: Copyright ElecSuper Incorporated
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | 20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | TA=25C | 7.5 | A | ||
| TA=75C | 5.8 | A | ||||
| Maximum Power Dissipation | PD | TA=25C | 1.39 | W | ||
| TA=75C | 0.83 | W | ||||
| Pulsed Drain Current | IDM | 30 | A | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | Single Operation | 70 | 90 | C/W | |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=10V | 10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.5 | 0.7 | 0.9 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=6.5A | 13 | 17 | m | |
| VGS=2.5V, ID=5.5A | 16 | 23 | m | |||
| Forward transconductance | gfs | VDS=5V, ID=6.5A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 1300 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=10V | 160 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=10V | 88 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=7.5A | 10 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=7.5A | 4.5 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=7.5A | 2.5 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, RL=1.5, RG=3 | 280 | ns | ||
| Rise Time | tr | VGS=4.5V, VDS=10V, RL=1.5, RG=3 | 330 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=10V, RL=1.5, RG=3 | ns | |||
| Fall Time | tf | VGS=4.5V, VDS=10V, RL=1.5, RG=3 | 2.5 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=6.5A | 1.5 | V | ||
2504101957_ElecSuper-ESJ8810_C42420840.pdf
Related Products
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
