ElecSuper AOD409 ES P Channel MOSFET optimized for low gate charge in power switching and conversion
Key Attributes
Model Number:
AOD409(ES)
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
28A
RDS(on):
27mΩ@10V;31mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
160pF
Pd - Power Dissipation:
50W
Output Capacitance(Coss):
180pF
Input Capacitance(Ciss):
3.02nF
Gate Charge(Qg):
46.6nC@10V
Mfr. Part #:
AOD409(ES)
Package:
TO-252
Product Description
Product Overview
The AOD409(ES) is a P-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This device is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Model: AOD409(ES)
- Package: TO-252
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: Copyright ElecSuper Incorporated
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | -28 | A | ||
| Continuous Drain Current | ID | TC=75°C | -22 | A | ||
| Maximum Power Dissipation | PD | TC=25°C | 50 | W | ||
| Maximum Power Dissipation | PD | TC=75°C | 30 | W | ||
| Pulsed Drain Current | IDM | -132 | A | |||
| Avalanche current single pulse | IAS | a | -29 | A | ||
| Avalanche energy single pulse | EAS | a | 136 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Case Thermal Resistance (t≤10s) | RθJC | Single Operation | 1.9 | 2.5 | °C/W | |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.1 | -1.6 | -2.1 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-20A | 27 | 34 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-20A | 31 | 38 | mΩ | |
| Forward Transconductance | gFS | VDS=-5V, ID=-20A | 60 | S | ||
| Input Capacitance | CISS | VGS=0V, VDS =-20V f=1MHz | 3020 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-20V f=1MHz | 180 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-20V f=1MHz | 160 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-20V ID =-10A | 46.6 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-20V ID =-10A | 9.1 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-20V ID =-10A | 6.2 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V, ID=-1A, RG=3Ω | 45 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-15V, ID=-1A, RG=3Ω | 28 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V, ID=-1A, RG=3Ω | 80 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-15V, ID=-1A, RG=3Ω | 6.6 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -1.5 | V | ||
2506121200_ElecSuper-AOD409-ES_C49108743.pdf
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