Discrete IGBT Fuji Electric FGW75XS120C 1200V voltage 75A current capacity for demanding electronics
Key Attributes
Model Number:
FGW75XS120C
Product Custom Attributes
Mfr. Part #:
FGW75XS120C
Package:
TO-247
Product Description
Product Overview
The Fuji Electric FGW75XS120C is a Discrete IGBT from the XS-series, designed for high-voltage applications. It features a 1200V voltage rating and a 75A current capacity, making it suitable for demanding power electronics systems. This IGBT is Pb-free and RoHS compliant, with a halogen-free molding compound, emphasizing environmental responsibility.
Product Attributes
- Brand: Fuji Electric
- Series: XS-series
- Certifications: Pb-free lead terminal, RoHS compliant, Halogen-free molding compound
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit | Remarks |
| Absolute Maximum Ratings | |||||||
| Collector-Emitter Voltage | VCES | 1200 | V | ||||
| Gate-Emitter Voltage | VGES | 20 | V | ||||
| Transient Gate-Emitter Voltage | tp < 1 s | 30 | V | ||||
| DC Collector Current | IC@25 | TC = 25 C | 117 | A | |||
| DC Collector Current | IC@100 | TC = 100 C | 75 | A | |||
| Pulsed Collector Current | ICP | 300 | A | Note *1 | |||
| Diode Forward Current | IF@25 | 117 | A | ||||
| Diode Forward Current | IF@100 | 75 | A | ||||
| Diode Pulsed Current | IFP | 300 | A | Note *1 | |||
| IGBT Max. Power Dissipation | Ptot_IGBT | TC = 25 C | 649 | W | |||
| FWD Max. Power Dissipation | Ptot_FWD | TC = 25 C | 233 | W | |||
| Operating Junction Temperature | Tvj | -40 | +175 | C | |||
| Storage Temperature | Tstg | -55 | +175 | C | |||
| Electrical Characteristics | |||||||
| Zero Gate Voltage Collector Current | ICES | VCE = 1200 V, VGE = 0 V, Tvj = 25 C | 250 | A | |||
| Zero Gate Voltage Collector Current | ICES | VCE = 1200 V, VGE = 0 V, Tvj = 175 C | 2 | mA | |||
| Gate-Emitter Leakage Current | IGES | VCE = 0 V, VGE = 20 V | 200 | nA | |||
| Gate-Emitter Threshold Voltage | VGE(th) | VCE = 20 V, IC = 75 mA | 4.9 | 5.5 | 6.1 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 75 A, Tvj = 25 C | 1.6 | 1.9 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 75 A, Tvj = 125 C | 2.05 | V | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 75 A, Tvj = 175 C | 2.15 | V | |||
| Input Capacitance | Cies | VCE = 25 V, VGE = 0 V, f = 1 MHz | 8400 | pF | |||
| Output Capacitance | Coes | VCE = 25 V, VGE = 0 V, f = 1 MHz | 114 | pF | |||
| Reverse Transfer Capacitance | Cres | VCE = 25 V, VGE = 0 V, f = 1 MHz | 68 | pF | |||
| Gate Charge | QG | VCC = 600 V, IC = 75 A, VGE = 15 V | 500 | nC | |||
| Turn-On Delay Time | td(on) | Tvj= 25 C, VCC = 600 V, IC = 75 A, VGE = 15 V, RG = 10 | 72 | ns | Energy loss include tail and FWD reverse recovery. | ||
| Rise Time | tr | Tvj= 25 C, VCC = 600 V, IC = 75 A, VGE = 15 V, RG = 10 | 60 | ns | |||
| Turn-Off Delay Time | td(off) | Tvj= 25 C, VCC = 600 V, IC = 75 A, VGE = 15 V, RG = 10 | 450 | ns | |||
| Fall Time | tf | Tvj= 25 C, VCC = 600 V, IC = 75 A, VGE = 15 V, RG = 10 | 58 | ns | |||
| Turn-On Energy | Eon | Tvj= 25 C, VCC = 600 V, IC = 75 A, VGE = 15 V, RG = 10 | 4.4 | mJ | |||
| Turn-Off Energy | Eoff | Tvj= 25 C, VCC = 600 V, IC = 75 A, VGE = 15 V, RG = 10 | 3 | mJ | |||
| Turn-On Delay Time | td(on) | Tvj = 175 C, VCC = 600 V, IC = 75 A, VGE = 15 V, RG = 10 | 78 | ns | Energy loss include tail and FWD reverse recovery. | ||
| Rise Time | tr | Tvj = 175 C, VCC = 600 V, IC = 75 A, VGE = 15 V, RG = 10 | 58 | ns | |||
| Turn-Off Delay Time | td(off) | Tvj = 175 C, VCC = 600 V, IC = 75 A, VGE = 15 V, RG = 10 | 500 | ns | |||
| Fall Time | tf | Tvj = 175 C, VCC = 600 V, IC = 75 A, VGE = 15 V, RG = 10 | 108 | ns | |||
| Turn-On Energy | Eon | Tvj = 175 C, VCC = 600 V, IC = 75 A, VGE = 15 V, RG = 10 | 5.6 | mJ | |||
| Turn-Off Energy | Eoff | Tvj = 175 C, VCC = 600 V, IC = 75 A, VGE = 15 V, RG = 10 | 4.6 | mJ | |||
| Forward Voltage Drop | VF | IF = 75 A, Tvj = 25 C | 2.9 | V | |||
| Forward Voltage Drop | VF | IF = 75 A, Tvj = 125 C | 3.2 | V | |||
| Forward Voltage Drop | VF | IF = 75 A, Tvj = 175 C | 3.2 | V | |||
| Diode Reverse Recovery Time | trr | VCC = 600 V, IF = 75 A, -diF/dt = 300 A/s, Tvj = 25 C | 280 | ns | |||
| Diode Reverse Recovery Charge | Qrr | VCC = 600 V, IF = 75 A, -diF/dt = 300 A/s, Tvj = 25 C | 1.7 | C | |||
| Diode Reverse Recovery Time | trr | VCC = 600 V, IF = 75 A, -diF/dt = 300 A/s, Tvj = 175 C | 460 | ns | |||
| Diode Reverse Recovery Charge | Qrr | VCC = 600 V, IF = 75 A, -diF/dt = 300 A/s, Tvj = 175 C | 3.8 | C | |||
| Thermal Resistance | |||||||
| Thermal Resistance, Junction-Ambient | Rth(j-a) | 50 | C/W | ||||
| Thermal Resistance, IGBT Junction to Case | Rth(j-c)_IGBT | 0.231 | C/W | ||||
| Thermal Resistance, FWD Junction to Case | Rth(j-c)_FWD | 0.644 | C/W | ||||
Applications
Uninterrupted Power Supply, PV Power Conditioner, Inverter welding machine.
2511281531_Fuji-Electric-FGW75XS120C_C33086665.pdf
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