SOT23 package NPN transistor FUXINSEMI BCV47 featuring high collector current and gain for circuits

Key Attributes
Model Number: BCV47
Product Custom Attributes
Emitter-Base Voltage(Vebo):
10V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
170MHz
Type:
-
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BCV47
Package:
SOT-23
Product Description

Product Overview

The FG BCV47 is an NPN transistor designed for high performance, featuring high collector current and high current gain. It is supplied in a SOT-23 package.

Product Attributes

  • Brand: FG
  • Type: Transistor (NPN)
  • Package: SOT-23
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-Base VoltageVCBO80V
Collector-Emitter VoltageVCEO60V
Emitter-Base VoltageVEBO10V
Collector CurrentIC500mA
Collector Power DissipationPC300mW
Thermal Resistance Junction To AmbientRJA416/W
Operation Junction and Storage Temperature RangeTJ,Tstg-55+150
Collector-base breakdown voltageV(BR)CBOIC=100A, IE=080V
Collector-emitter breakdown voltageV(BR)CEOIC=10mA, IB=060V
Emitter-base breakdown voltageV(BR)EBOIE=10A, IC=010V
Collector cut-off currentICBOVCB=60V, IE=00.1A
Emitter cut-off currentIEBOVEB=4V, IC=00.1A
DC current gainhFEVCE=1V, IC=100A2000
DC current gainhFEVCE=5V, IC=10mA4000
DC current gainhFEVCE=5V, IC=100mA10000
DC current gainhFEVCE=5V, IC=0.5A2000
Collector-emitter saturation voltageVCE(sat)IC=100mA, IB=0.1mA1V
Base-emitter saturation voltageVBE(sat)IC=100mA, IB=0.1mA1.5V
Transition frequencyfTVCE=5V,IC=50mA, f=100MHz170MHz
Collector output capacitanceCobVCB=10V, IE=0, f=1MHz3.5pF

2411271424_FUXINSEMI-BCV47_C42387324.pdf

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