DC DC conversion and charging circuits using ElecSuper ESN6426 N Channel MOSFET with low gate charge
Key Attributes
Model Number:
ESN6426
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
65A
RDS(on):
4mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.75V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
242pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.2nF
Pd - Power Dissipation:
48W
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
ESN6426
Package:
PDFN5x6-8L
Product Description
Product Overview
The ESN6426 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering high density cell design, reliability, and avalanche rating. This product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Model: ESN6426
- Package: PDFN5*6-8L
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: Pb-free
- Ordering Information: ESN6426/lot, Tape & Reel, 5,000 PCS per reel, 13 inches reel size
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | 65 | A | ||
| Continuous Drain Current | ID | TC=75°C | 50 | A | ||
| Maximum Power Dissipation | PD | TC=25°C | 48 | W | ||
| Maximum Power Dissipation | PD | TC=75°C | 29 | W | ||
| Pulsed Drain Current | IDM | a | 260 | A | ||
| Avalanche Current, Single Pulsed | IAS | b | 32 | A | ||
| Avalanche Energy, Single Pulsed | EAS | b | 153 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤ 10 s | 20 | °C/W | ||
| Junction-to-Case Thermal Resistance | RθJC | Steady State | 2.6 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.75 | 2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 4.0 | 6.5 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=16A | 6.5 | 8.5 | mΩ | |
| Forward Transconductance | gFS | VDS=5.0V, ID=10A | 25 | 40 | S | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 2200 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 275 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 242 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=24V, ID=30A | 48 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=24V, ID=30A | 8.8 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=24V, ID=30A | 10.0 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=20V, ID=60A, RG=1.8Ω | 12.5 | ns | ||
| Rise Time | tr | VGS=4.5V, VDS=20V, ID=60A, RG=1.8Ω | 90 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=20V, ID=60A, RG=1.8Ω | 142 | ns | ||
| Fall Time | tf | VGS=4.5V, VDS=20V, ID=60A, RG=1.8Ω | 85 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=1.0A | 0.75 | 1.5 | V | |
2504101957_ElecSuper-ESN6426_C5350976.pdf
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