Low gate charge P channel MOSFET FETek FKD6115 suitable for synchronous buck converter power circuits
Key Attributes
Model Number:
FKD6115
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
35A
RDS(on):
25mΩ@10V,18A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
141pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
52.1W
Input Capacitance(Ciss):
3.635nF@15V
Gate Charge(Qg):
25nC@4.5V
Mfr. Part #:
FKD6115
Package:
TO-252
Product Description
Product Overview
The FKD6115 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approved, featuring super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: FETek Technology Corp.
- Product Line: FKD6115
- Type: P-Ch MOSFET
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, -VGS @ -10V | -35 | A | |||
| ID@TC=100 | Continuous Drain Current, -VGS @ -10V | -27 | A | |||
| IDM | Pulsed Drain Current | -70 | A | |||
| EAS | Single Pulse Avalanche Energy | 113 | mJ | |||
| IAS | Avalanche Current | 47.6 | A | |||
| PD@TC=25 | Total Power Dissipation | 52.1 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient | 62 | /W | |||
| RJC | Thermal Resistance Junction-Case | 2.4 | /W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-18A | 25 | m | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-4.5V , ID=-12A | 33 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | |
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=25 | 1 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | VDS=-10V , ID=-18A | 23 | S | ||
| Qg | Total Gate Charge | VDS=-20V , VGS=-4.5V , ID=-12A | 25 | nC | ||
| Qgs | Gate-Source Charge | 6.7 | ||||
| Qgd | Gate-Drain Charge | 5.5 | ||||
| Td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3, ID=-1A | 38 | ns | ||
| Tr | Rise Time | 23.6 | ||||
| Td(off) | Turn-Off Delay Time | 100 | ||||
| Tf | Fall Time | 6.8 | ||||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 3635 | pF | ||
| Coss | Output Capacitance | 224 | ||||
| Crss | Reverse Transfer Capacitance | 141 | ||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | -35 | A | ||
| ISM | Pulsed Source Current | -70 | A | |||
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | -1 | V |
2410121538_FETek-FKD6115_C5361878.pdf
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