P channel MOSFET for synchronous buck converters FETek FKBA3115 offers superior switching and thermal performance
Key Attributes
Model Number:
FKBA3115
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
59A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
421pF
Number:
1 P-Channel
Output Capacitance(Coss):
508pF
Input Capacitance(Ciss):
3.448nF
Pd - Power Dissipation:
52W
Gate Charge(Qg):
33nC@4.5V
Mfr. Part #:
FKBA3115
Package:
PDFN-8(5x6)
Product Description
Product Overview
The FKBA3115 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approved, featuring super low gate charge and excellent CdV/dt effect decline due to its advanced high cell density trench technology.
Product Attributes
- Brand: FETek Technology Corp.
- Product Type: P-Ch 30V Fast Switching MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit | |
| Absolute Maximum Ratings | VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | 25 | V | ||||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V | 10s Steady State | -59 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V | 10s Steady State | -37 | A | |||
| IDM | Pulsed Drain Current | 2 | -180 | A | |||
| EAS | Single Pulse Avalanche Energy | 3 | 153 | mJ | |||
| PD@TC=25 | Total Power Dissipation | 4 | 52.1 | W | |||
| Electrical Characteristics | BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-20A | 7.8 | 9.8 | m | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-4.5V , ID=-15A | 11 | 15 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | ||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=25 | 1 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=25V , VDS=0V | 100 | nA | |||
| Diode Characteristics | IS | Continuous Source Current | VG=VD=0V , Force Current | -59 | A | ||
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | |||
| trr | Reverse Recovery Time | IF=-15A , dI/dt=100A/s , TJ=25 | 29 | nS | |||
| Qrr | Reverse Recovery Charge | 15 | nC | ||||
| Thermal Data | RJA | Thermal Resistance Junction-Ambient | 1 | 62 | /W | ||
| RJA | Thermal Resistance Junction-Ambient | 1 (t 10s) | 25 | /W | |||
| RJC | Thermal Resistance Junction-Case | 1 | 2.4 | /W |
2410121536_FETek-FKBA3115_C2926955.pdf
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