synchronous buck converter MOSFET FETek FKBB3014 featuring low RDS ON and enhanced gate charge characteristics
Key Attributes
Model Number:
FKBB3014
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
37A
RDS(on):
12mΩ@10V,15A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
108pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
896pF@15V
Pd - Power Dissipation:
26W
Gate Charge(Qg):
9.82nC@4.5V
Mfr. Part #:
FKBB3014
Package:
PMPAK-3x3
Product Description
Product Overview
The FKBB3014 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements with 100% EAS guaranteed and full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: FETek Technology Corp.
- Product Line: FKBB3014
- Type: N-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- EAS Guaranteed: 100%
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Units |
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 30 | V | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=15A | 12 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=10A | 16.5 | V | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.0 | 2.5 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=24V , VGS=0V , TJ=25 | 1 | uA | ||
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | 100 | nA | ||
| Forward Transconductance (gfs) | VDS=5V , ID=15A | 24.4 | S | ||
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | 1.8 | |||
| Total Gate Charge (Qg) (4.5V) | VDS=15V , VGS=4.5V , ID=12A | 9.82 | nC | ||
| Gate-Source Charge (Qgs) | 2.24 | ||||
| Gate-Drain Charge (Qgd) | 5.54 | ||||
| Turn-On Delay Time (Td(on)) | VDD=15V , VGS=10V , RG=1.5 ID=20A | 6.4 | ns | ||
| Rise Time (Tr) | 39 | ||||
| Turn-Off Delay Time (Td(off)) | 21 | ||||
| Fall Time (Tf) | 4.7 | ||||
| Input Capacitance (Ciss) | VDS=15V , VGS=0V , f=1MHz | 896 | pF | ||
| Output Capacitance (Coss) | 126 | ||||
| Reverse Transfer Capacitance (Crss) | 108 | ||||
| Continuous Drain Current (ID) | TC=25, VGS @ 10V | 37 | A | ||
| Continuous Drain Current (ID) | TC=100, VGS @ 10V | 24 | A | ||
| Continuous Drain Current (ID) | TA=25, VGS @ 10V | 9.5 | A | ||
| Continuous Drain Current (ID) | TA=70, VGS @ 10V | 7.6 | A | ||
| Pulsed Drain Current (IDM) | 75 | A | |||
| Single Pulse Avalanche Energy (EAS) | 24.2 | mJ | |||
| Avalanche Current (IAS) | 22 | A | |||
| Total Power Dissipation (PD) | TC=25 | 26 | W | ||
| Total Power Dissipation (PD) | TA=25 | 1.67 | W | ||
| Storage Temperature Range (TSTG) | -55 | 150 | |||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||
| Thermal Resistance Junction-Ambient (RJA) | 75 | /W | |||
| Thermal Resistance Junction-Case (RJC) | 4.8 | /W | |||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | 37 | A | ||
| Pulsed Source Current (ISM) | 75 | A | |||
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | 1 | V |
2411220326_FETek-FKBB3014_C7529476.pdf
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