FUXINSEMI MURA120T3G-FS electronic part designed for maximum repetitive peak reverse voltage applications
Key Attributes
Model Number:
MURA120T3G-FS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
40A
Reverse Leakage Current (Ir):
2uA@200V
Reverse Recovery Time (trr):
25ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
200V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
875mV@1A
Current - Rectified:
1A
Mfr. Part #:
MURA120T3G-FS
Package:
SMA(DO-214AC)
Product Description
Product Overview
The MURA120T3G-FS is a high-performance component designed for various electronic applications. It offers robust maximum ratings and electrical characteristics suitable for demanding environments. Key features include its maximum average forward rectified current, maximum repetitive peak reverse voltage, and operating junction temperature range. This component is compliant to Halogen-free standards.
Product Attributes
- Brand: (Implicitly indicated by model number prefix)
- Certification: Halogen-free compliant
Technical Specifications
| Parameter | Symbol | Units | Value (Typical/Max) | Conditions |
|---|---|---|---|---|
| Maximum average forward rectified current | IO | A | 50 | (AT T =25 C unless otherwise noted) |
| Maximum instantaneous forward voltage | VF | V | 2.0 | at IF = 10A (AT T =25 C) |
| Maximum instantaneous forward voltage | VF | V | 0.875 | at IF = 10A (AT T =125 C) |
| Maximum reverse leakage current at rated VR | IR | A | 40 | (AT T =25 C unless otherwise noted) |
| Maximum reverse leakage current at rated VR | IR | A | 200 | (AT T =125 C unless otherwise noted) |
| Typical thermal resistance junction to ambient | RJA | C / W | 140 | (Note 3) (AT T =25 C unless otherwise noted) |
| Typical thermal resistance junction to case | RJC | C / W | 200 | (Note 3) (AT T =25 C unless otherwise noted) |
| Maximum repetitive peak reverse voltage | VRRM | V | 150 | (AT T =25 C unless otherwise noted) |
| Maximum RMS voltage | VRMS | V | 65 to 175 | (AT T =25 C unless otherwise noted) |
| Maximum continuous reverse voltage | VR | V | 150 | (AT T =25 C unless otherwise noted) |
| Storage temperature range | TSTG | C | -65 to 175 | (AT T =25 C unless otherwise noted) |
| Operating junction temperature range | TJ | C | -65 to 175 | (AT T =25 C unless otherwise noted) |
| Maximum reverse recovery time | trr | ns | 15 | (Note 2) |
| Typical junction capacitance | CJ | pF | 25 | (Note 1) |
| Non-repetitive peak forward surge current | IFSM | A | 200 | 8.3ms single half sine-wave (AT T =25 C) |
Notes:
1: Measured at 1 MHz and applied reverse voltage of 4.0 VDC
2: Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A
3: Mounted on FR-4 PCB Copper, minimum recommended pad layout
2512291555_FUXINSEMI-MURA120T3G-FS_C7503111.pdf
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