Low Gate Charge N Channel MOSFET ElecSuper ESJ2324 Designed for Power Switching and DC DC Conversion
Key Attributes
Model Number:
ESJ2324
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2.6A
RDS(on):
90mΩ@10V,2.5A
Gate Threshold Voltage (Vgs(th)):
1.65V@250uA
Reverse Transfer Capacitance (Crss@Vds):
1.4pF@25V
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
206pF@25V
Gate Charge(Qg):
4.2nC@10V
Mfr. Part #:
ESJ2324
Package:
SOT-23
Product Description
Product Overview
The ESJ2324 is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications. This is a standard, Pb-free product.
Product Attributes
- Brand: ElecSuper
- Product Name: SuperMOS SOT-23
- Material: Halogen free
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.65 | 2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=2.5A | 90 | 135 | mΩ | |
| VGS=4.5V, ID=2A | 120 | 195 | mΩ | |||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 206 | pF | ||
| Output Capacitance | COSS | 29 | pF | |||
| Reverse Transfer Capacitance | CRSS | 1.4 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=25V, ID=2.5A | 4.2 | nC | ||
| Gate-to-Source Charge | QGS | 1.5 | nC | |||
| Gate-to-Drain Charge | QGD | 1.1 | nC | |||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=25V, ID=2.5A, RG=2Ω | 14.7 | ns | ||
| Rise Time | tr | 3.5 | ns | |||
| Turn-Off Delay Time | td(OFF) | 20.9 | ns | |||
| Fall Time | tf | 2.7 | ns | |||
| Forward Voltage | VSD | VGS=0V, IS=1.0A | 0.8 | 1.5 | V | |
2504101957_ElecSuper-ESJ2324_C42420850.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
