Durable ElecSuper IRF540NPBF ES N Channel MOSFET with high density cell design and low gate charge
Key Attributes
Model Number:
IRF540NPBF-ES
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
37mΩ@10V;39mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
76pF
Number:
1 N-channel
Output Capacitance(Coss):
92pF
Pd - Power Dissipation:
35W
Input Capacitance(Ciss):
1.982nF
Gate Charge(Qg):
20nC@4.5V
Mfr. Part #:
IRF540NPBF-ES
Package:
TO-220
Product Description
Product Overview
The IRF540NPBF-ES is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuits. This standard product is Pb-free and features a high-density cell design for low RDS(on), is Halogen free, reliable, rugged, avalanche rated, and has low leakage current.
Product Attributes
- Brand: ElecSuper
- Part Number: IRF540NPBF-ES
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: 100% UIS TESTED
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | 18 | A | ||
| Continuous Drain Current | ID | TC=75°C | 14 | A | ||
| Maximum Power Dissipation | PD | 35 | W | |||
| Pulsed Drain Current | IDM | 72 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Case Thermal Resistance | RθJC | Single Operation | 3.6 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.5 | 2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=10A | 37 | 44 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=6A | 39 | 55 | mΩ | |
| Forward transconductance | gfs | VDS=5V, ID=10A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 1982 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 92 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 76 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=80V, ID=10A | 20 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=80V, ID=10A | 3.1 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=80V, ID=10A | 14 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=80V, ID=10A, RG=3Ω | 12 | ns | ||
| Rise Time | tr | VGS=4.5V, VDS=80V, ID=10A, RG=3Ω | 93 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=80V, ID=10A, RG=3Ω | 40 | ns | ||
| Fall Time | tf | VGS=4.5V, VDS=80V, ID=10A, RG=3Ω | 72 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=10A | 1.5 | V | ||
2504101957_ElecSuper-IRF540NPBF-ES_C39832212.pdf
Related Products
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
