Complementary MOSFET ElecSuper AO4606 designed for level shifted high side switches and power management
Key Attributes
Model Number:
AO4606
Product Custom Attributes
Drain To Source Voltage:
30V;30V
Current - Continuous Drain(Id):
7.5A;4.6A
RDS(on):
15mΩ@10V;24mΩ@4.5V;44mΩ@10V;60mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF;100pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
45pF;140pF
Input Capacitance(Ciss):
255pF;760pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
5.2nC@10V;14nC@10V
Mfr. Part #:
AO4606
Package:
SOP8
Product Description
Product Overview
The AO4606 is a complementary MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. These MOSFETs are suitable for forming level-shifted high-side switches and various other applications, including PWM, load switching, power management in portable/desktop PCs, and DC/DC conversion. The device is 100% UIS tested, avalanche rated, and features a high-density cell design for low RDS(on).
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
Technical Specifications
| Parameter | N-channel (Typ.) | P-channel (Typ.) | Unit |
| Drain-Source Voltage (BVDSS) | 30 | -30 | V |
| Gate-Source Voltage (VGS) | 20 | V | |
| Continuous Drain Current (TA=25C) | 7.5 | -4.6 | A |
| Continuous Drain Current (TA=75C) | 5.8 | -4 | A |
| Maximum Power Dissipation (TA=25C) | 2 | 2 | W |
| Maximum Power Dissipation (TA=75C) | 1.2 | 1.2 | W |
| Pulsed Drain Current (IDM) | 30 | -18.4 | A |
| Operating Junction Temperature (TJ) | 150 | C | |
| Storage Temperature Range (Tstg) | -55 to +150 | C | |
| Junction-to-Ambient Thermal Resistance (RJA) | 48 (Typical) / 62.5 (Maximum) | C/W | |
| Junction-to-Lead Thermal Resistance (RJL) | 32 (Typical) / 40 (Maximum) | C/W | |
| Gate Threshold Voltage (VGS(TH)) | 1.0 - 2.2 | -1.0 - -2.0 | V |
| RDS(on) @ VGS=10V (N-ch) / VGS=-10V (P-ch) | 15 m (ID=6A) | 44 m (ID=-4.6A) | m |
| RDS(on) @ VGS=4.5V (N-ch) / VGS=-4.5V (P-ch) | 24 m (ID=5A) | 60 m (ID=-4A) | m |
| Input Capacitance (CISS) | 255 | 760 | pF |
| Output Capacitance (COSS) | 45 | 140 | pF |
| Reverse Transfer Capacitance (CRSS) | 35 | 100 | pF |
| Total Gate Charge (QG(TOT)) | 5.2 nC (VGS=10V, VDS=15V, ID=6A) | 14 nC (VGS=-10V, VDS=-15V, ID=-4.6A) | nC |
| Turn-On Delay Time (td(ON)) | 4.5 ns (VGS=10V, VDS=15V, RL=25, RGEN=3) | 10 ns (VGS=-10V, VDS=-15V, RL=2.5, RG=3) | ns |
| Rise Time (tr) | 2.5 ns | 8 ns | ns |
| Turn-Off Delay Time (td(OFF)) | 14.5 ns | 18 ns | ns |
| Fall Time (tf) | 3.5 ns | 6 ns | ns |
| Forward Voltage (VSD) | 0.45 - 1.5 V (IS=1.0A) | -0.45 - -1.5 V (ISD=-1A) | V |
2504101957_ElecSuper-AO4606_C5350991.pdf
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