N channel MOSFET ElecSuper SI2308BDS ES featuring halogen free material for DC DC conversion applications
Key Attributes
Model Number:
SI2308BDS-ES
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3.2A
RDS(on):
58mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.35V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
24pF
Number:
1 N-channel
Output Capacitance(Coss):
29pF
Input Capacitance(Ciss):
400pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
8.8nC@10V
Mfr. Part #:
SI2308BDS-ES
Package:
SOT-23
Product Description
SI2308BDS-ES SuperMOS - SOT-23 N-channel MOSFET
The SI2308BDS-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for DC-DC conversion, power switch, and charging circuits, offering high density cell design for low RDS(on), reliability, and ruggedness.
Product Attributes
- Brand: ElecSuper
- Product Series: SuperMOS
- Package: SOT-23
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | - | - | - | 60 | V |
| Gate-Source Voltage | VGS | - | - | - | ±20 | V |
| Continuous Drain Current | ID | TA=25°C | - | - | 3.2 | A |
| Continuous Drain Current | ID | TA=75°C | - | - | 2.4 | A |
| Maximum Power Dissipation | PD | TA=25°C | - | - | 1.4 | W |
| Maximum Power Dissipation | PD | TA=75°C | - | - | 0.84 | W |
| Pulsed Drain Current | IDM | tp=10µs, Duty Cycle=1% | - | - | 12.8 | A |
| Operating Junction Temperature | TJ | - | - | - | 150 | °C |
| Lead Temperature | TL | - | - | - | 260 | °C |
| Storage Temperature Range | Tstg | - | -55 | - | 150 | °C |
| Junction-to-Ambient Thermal Resistance | RθJA | a, t ≤10 s | - | 75 | 90 | °C/W |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | - | 1 | - | µA |
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.9 | 1.35 | 2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=3A | - | 58 | 90 | mΩ |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=2A | - | 69 | 110 | mΩ |
| Forward Transconductance | gFS | VDS=5.0V, ID=3A | - | 6.5 | 15 | S |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=30V | - | 400 | - | pF |
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=30V | - | 29 | - | pF |
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=30V | - | 24 | - | pF |
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=30V, ID=3A | - | 8.8 | - | nC |
| Gate-to-Source Charge | QGS | VGS=10V, VDS=30V, ID=3A | - | 1 | - | nC |
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=30V, ID=3A | - | 2.5 | - | nC |
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=30V, ID=3A, RG=2.3Ω | - | 4.5 | - | ns |
| Rise Time | tr | VGS=10V, VDS=30V, ID=3A, RG=2.3Ω | - | 10 | - | ns |
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=30V, ID=3A, RG=2.3Ω | - | 12.5 | - | ns |
| Fall Time | tf | VGS=10V, VDS=30V, ID=3A, RG=2.3Ω | - | 1.5 | - | ns |
| Forward Voltage | VSD | VGS=0V, IS=1.0A | - | 0.45 | 1.5 | V |
2504101957_ElecSuper-SI2308BDS-ES_C22363744.pdf
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