Power MOSFET ElecSuper IRF1404ZPBF ES with Shielded Gate Trench Technology and Low RDS ON Resistance
Key Attributes
Model Number:
IRF1404ZPBF(ES)
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
140A
RDS(on):
2mΩ@10V;3mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
480pF
Output Capacitance(Coss):
2.8nF
Pd - Power Dissipation:
83W
Input Capacitance(Ciss):
3.83nF
Gate Charge(Qg):
66nC@10V
Mfr. Part #:
IRF1404ZPBF(ES)
Package:
TO-220
Product Description
Product Overview
The IRF1404ZPBF(ES) is an N-Channel enhancement mode Field Effect Transistor utilizing advanced shielded gate trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This device is Pb-free and designed for high density cell structure, ensuring low RDS(on), and is Halogen free, reliable, rugged, and avalanche rated with low leakage current.
Product Attributes
- Brand: ElecSuper
- Part Number: IRF1404ZPBF(ES)
- Package: TO-220
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: Pb-free, 100% UIS TESTED
Technical Specifications
| Parameter | Symbol | Limit | Unit | Conditions |
| Drain-Source Voltage | BVDSS | 40 | V | VGS=0V, ID=250uA |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 140 | A | TC=25°C |
| Maximum Power Dissipation | PD | 83 | W | |
| Pulsed Drain Current | IDM | 560 | A | |
| Single Pulse Avalanche Energy | EAS | 200 | mJ | Starting TJ=25°C, VDD=32V, VG=10V, RG=25Ω, L=0.5mH |
| Operating Junction Temperature | TJ | 150 | °C | |
| Lead Temperature | TL | 260 | °C | |
| Storage Temperature Range | Tstg | -55 to 150 | °C | |
| Junction-to-Case Thermal Resistance | RθJC | 1.5 | °C/W | Typical |
| Gate Threshold Voltage | VGS(TH) | 1.0 - 2.5 | V | VGS=VDS, ID=250uA |
| Drain-to-source On-resistance | RDS(on) | 2.0 - 2.3 | mΩ | VGS=10V, ID=20A (Typical) |
| Drain-to-source On-resistance | RDS(on) | 3.0 - 3.8 | mΩ | VGS=4.5V, ID=20A (Typical) |
| Input Capacitance | CISS | 3830 | pF | VGS=0V, f=1MHz, VDS=25V |
| Output Capacitance | COSS | 2800 | pF | VGS=0V, f=1MHz, VDS=25V |
| Reverse Transfer Capacitance | CRSS | 480 | pF | VGS=0V, f=1MHz, VDS=25V |
| Total Gate Charge | QG(TOT) | 66 | nC | VGS=10V, VDD=32V, ID=10A |
| Gate-to-Source Charge | QGS | 13.6 | nC | VGS=10V, VDD=32V, ID=10A |
| Gate-to-Drain Charge | QGD | 12.6 | nC | VGS=10V, VDD=32V, ID=10A |
| Turn-On Delay Time | td(ON) | 890 | ns | VGS=10V, VDD=20V, ID=20A, RG=0.5Ω |
| Rise Time | tr | 21 | ns | VGS=10V, VDD=20V, ID=20A, RG=0.5Ω |
| Turn-Off Delay Time | td(OFF) | 72 | ns | VGS=10V, VDD=20V, ID=20A, RG=0.5Ω |
| Fall Time | tf | 34 | ns | VGS=10V, VDD=20V, ID=20A, RG=0.5Ω |
| Forward Voltage | VSD | 1.5 | V | VGS=0V, IS=20A |
2504101957_ElecSuper-IRF1404ZPBF-ES_C42412306.pdf
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