High Reliability Low Gate Charge P Channel MOSFET ElecSuper AO4805 for DC DC Conversion and Power Switch
Key Attributes
Model Number:
AO4805
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
300pF
Number:
2 P-Channel
Output Capacitance(Coss):
370pF
Input Capacitance(Ciss):
2.06nF
Pd - Power Dissipation:
1.9W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
AO4805
Package:
SOP8
Product Description
AO4805 P-Channel MOSFET
The AO4805 is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -30 | V | |||
| Gate-Source Voltage | VGS | ±25 | V | |||
| Continuous Drain Current | ID | TA=25°C | -10 | A | ||
| Continuous Drain Current | ID | TA=75°C | -8 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 3.2 | W | ||
| Maximum Power Dissipation | PD | TA=75°C | 1.9 | W | ||
| Pulsed Drain Current | IDM | -40 | A | |||
| Avalanche Current, Single Pulsed | IAS | a:Tj=25°C, VDD=-30V, VG=-10V, L=0.3mH, Rg=25Ω | -21 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a:Tj=25°C, VDD=-30V, VG=-10V, L=0.3mH, Rg=25Ω | 66 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-30V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=±25V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.5 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-20V, ID=-9A | 19 | mΩ | ||
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-8A | 15 | 22 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-5A | 19 | 28 | mΩ | |
| Input Capacitance | CISS | VGS=0V, VDS =-15V f=1MHz | 2060 | 2600 | pF | |
| Output Capacitance | COSS | VGS=0V, VDS =-15V f=1MHz | 370 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-15V f=1MHz | 300 | pF | ||
| Gate Resistance | Rg | f=1MHZ | 2.5 | Ω | ||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V ID=-8A | 30 | 40 | nC | |
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-15V ID=-8A | 4.5 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-15V ID=-8A | 10 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V RL=1Ω, RG=3Ω | 11 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-15V RL=1Ω, RG=3Ω | 9.5 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V RL=1Ω, RG=3Ω | 25 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-15V RL=1Ω, RG=3Ω | 12 | ns | ||
| Forward Voltage | VSD | VGS=0V, ISD=-8A | -0.75 | -1.5 | V | |
2504101957_ElecSuper-AO4805_C5224317.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
