Power Management and Load Switching Solutions Featuring FM 2060A N MOS N Channel Trench Power MOSFET
Key Attributes
Model Number:
2060A(N MOS)
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
60A
RDS(on):
6.5mΩ@4.5V
Operating Temperature -:
-55℃~+155℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
305pF
Output Capacitance(Coss):
389pF
Pd - Power Dissipation:
62W
Input Capacitance(Ciss):
2.95nF
Gate Charge(Qg):
36nC@4.5V
Mfr. Part #:
2060A(N MOS)
Package:
TO-252
Product Description
Product Overview
The 2060A is an N-Channel Trench Power MOSFET featuring advanced trench technology for excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. It offers high power and current handling capability, making it suitable for a wide variety of applications including battery protection, load switching, and power management. This lead-free product has undergone 100% UIS and Vds testing.
Product Attributes
- Brand: SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. (Superchip)
- Origin: China
- Package: TO-252 (DPAK)
- Certifications: 100% UIS TESTED!, 100% Vds TESTED!
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | VGS=0V | 20 | V | ||
| Gate-Source Voltage | VGS | VDS=0V | 12 | V | ||
| Drain Current-Continuous | ID | Tc=25 (Note1) | 60 | A | ||
| Drain Current-Continuous | ID | Tc=100 | 42 | A | ||
| Drain Current-Continuous@ Current-Pulsed | IDM | (Note 2) | 202 | A | ||
| Maximum Power Dissipation | PD | Tc=25 | 62 | W | ||
| Maximum Power Dissipation | PD | Tc=100 | 38 | W | ||
| Avalanche energy | EAS | (Note 3) | 216 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 155 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | - | 1.95 | /W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.45 | 0.7 | 1.0 | V |
| Forward Transconductance | gFS | VDS=5V,ID=15A | 35 | S | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=20A(Tc=25) | 4.9 | 6.5 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=20A (Tc=125) | 6.5 | 11 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=2.5V, ID=15A | 6.2 | 8.6 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS=0V, f=1.0MHz | 2950 | pF | ||
| Output Capacitance | Coss | VDS=15V,VGS=0V, f=1.0MHz | 389 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V, f=1.0MHz | 305 | pF | ||
| Gate resistance | Rg | VGS=0V, VDS=0V,f=1.0MHz | 1.3 | |||
| Turn-on Delay Time | td(on) | VGS=4.5V, VDS=15V, RL=0.75,RGEN=3 | 19 | nS | ||
| Turn-on Rise Time | tr | VGS=4.5V, VDS=15V, RL=0.75,RGEN=3 | 55 | nS | ||
| Turn-Off Delay Time | td(off) | VGS=4.5V, VDS=15V, RL=0.75,RGEN=3 | 78 | nS | ||
| Turn-Off Fall Time | tf | VGS=4.5V, VDS=15V, RL=0.75,RGEN=3 | 29 | nS | ||
| Total Gate Charge | Qg | VGS=4.5V, VDS=10V, ID=12A | 36 | nC | ||
| Gate-Source Charge | Qgs | VGS=4.5V, VDS=10V, ID=12A | 5 | nC | ||
| Gate-Drain Charge | Qgd | VGS=4.5V, VDS=10V, ID=12A | 14 | nC | ||
| Source-Drain Diode Characteristics | ||||||
| Source-Drain Current(Body Diode) | ISD | 60 | A | |||
| Forward on Voltage | VSD | VGS=0V,IS=20A | 1.2 | V | ||
| Body Diode Reverse Recovery Time | trr | IF=20A, dI/dt=100A/s | 26 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=20A, dI/dt=100A/s | 12 | nC | ||
2410010301_FM-2060A-N-MOS_C2932009.pdf
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