Low Gate Charge N Channel MOSFET ElecSuper AO4430 Designed for Power Switching and Charging Circuits
Key Attributes
Model Number:
AO4430
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
7.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF
Number:
1 N-channel
Output Capacitance(Coss):
155pF
Input Capacitance(Ciss):
876pF
Pd - Power Dissipation:
3.15W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
AO4430
Package:
SOP8
Product Description
Product Overview
The AO4430 is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.4 | 1.8 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=13A | 7.5 | 12 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=10A | 12 | 18 | m | |
| Forward Trans conductance | gFS | VDS=5.0V, ID=13A | 28 | 100 | S | |
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | 876 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=15V | 155 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=15V | 140 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=15V, ID=6A | 11 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=15V, ID=6A | 2.7 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=15V, ID=6A | 5.1 | nC | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=20V, ID=6A, RG=6 | 4.7 | ns | ||
| Rise Time | tr | VGS=10V, VDS=20V, ID=6A, RG=6 | 35 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=20V, ID=6A, RG=6 | 35 | ns | ||
| Fall Time | tf | VGS=10V, VDS=20V, ID=6A, RG=6 | 15 | ns | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, IS=1.0A | 0.45 | 1.2 | V | |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TA=25C | 13 | A | ||
| Continuous Drain Current | ID | TA=75C | 10 | A | ||
| Maximum Power Dissipation | PD | TA=25C | 3.15 | W | ||
| Maximum Power Dissipation | PD | TA=75C | 1.88 | W | ||
| Pulsed Drain Current | IDM | 52 | A | |||
| Avalanche Current, Single Pulsed | IAS | 16 | A | |||
| Avalanche Energy, Single Pulsed | EAS | 38 | mJ | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | to | 150 | C | |
| Junction-to-Ambient Thermal Resistance | RJA | t 10 s | 32 | 40 | C/W | |
| Junction-to-Case Thermal Resistance | RJC | Steady State | 17 | 24 | C/W | |
2504101957_ElecSuper-AO4430_C5224297.pdf
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