N Channel Enhancement Mode MOSFET ElecSuper CJL8810 ES for in Charging Circuits and DC DC Conversion
Key Attributes
Model Number:
CJL8810-ES
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7.6A
RDS(on):
23mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
150pF
Number:
2 N-Channel
Output Capacitance(Coss):
165pF
Input Capacitance(Ciss):
1.15nF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
15nC@4.5V
Mfr. Part #:
CJL8810-ES
Package:
SOT23-6L
Product Description
Product Overview
The CJL8810-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology to deliver excellent low RDS(ON) with minimal gate charge. It is ideally suited for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Model: CJL8810-ES
- Package: SOT23-6L
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: Pb-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | TA=25C | 7.6 | A | ||
| Continuous Drain Current | ID | TA=75C | 5.9 | A | ||
| Maximum Power Dissipation | PD | TA=25C | 1.5 | W | ||
| Maximum Power Dissipation | PD | TA=75C | 0.9 | W | ||
| Pulsed Drain Current | IDM | 30.4 | A | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | t 10 s | 83.3 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=10V | 10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.5 | 0.7 | 0.9 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=5A | 13.5 | 17 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=2.5V, ID=5A | 16.5 | 23 | m | |
| Forward Transconductance | gFS | VDS=5.0V, ID=5A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 1150 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=10V | 165 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=10V | 150 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=5A | 15 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=5A | 1 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=5A | 3.5 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, RL=1.35, RG=3 | 8 | ns | ||
| Rise Time | tr | VGS=4.5V, VDS=10V, RL=1.35, RG=3 | 11 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=10V, RL=1.35, RG=3 | 50 | ns | ||
| Fall Time | tf | VGS=4.5V, VDS=10V, RL=1.35, RG=3 | 18 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=1A | 0.45 | 1.5 | V | |
2411220027_ElecSuper-CJL8810-ES_C19725084.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
