ElecSuper SI2323DS T1 ES P Channel MOSFET offering fast switching and low RDS ON for power circuits
Key Attributes
Model Number:
SI2323DS-T1-ES
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.3A
RDS(on):
36mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
620mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
52pF
Number:
1 P-Channel
Input Capacitance(Ciss):
430pF
Output Capacitance(Coss):
65pF
Pd - Power Dissipation:
900mW
Gate Charge(Qg):
4.3nC@4.5V
Mfr. Part #:
SI2323DS-T1-ES
Package:
SOT-23
Product Description
Product Overview
The SI2323DS-T1-ES is a P-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switching, and charging circuits, offering fast switching, high-density cell design, and a reliable, rugged construction. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Model: SI2323DS-T1-ES
- Package: SOT-23
- Marking: 2301
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: Pb-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=12V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.4 | -0.62 | -1.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-2A | 36 | 47 | m | |
| VGS=-2.5V, ID=-1.5A | 50 | 63 | m | |||
| VGS=-1.8V, ID=-1A | 72 | 90 | m | |||
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, VDS =-10V f=1MHz | 430 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-10V f=1MHz | 65 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-10V f=1MHz | 52 | pF | ||
| Total Gate Charge | QG | VGS=-4.5V, VDS=-10V ID =-2A | 4.3 | nC | ||
| VGS=-4.5V, VDS=-10V ID =-2A | 0.8 | nC | ||||
| Gate-to-Drain Charge | QGD | VGS=-4.5V, VDS=-10V ID =-2A | 1.1 | nC | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=-4.5V, VDS=-10V ID=-2A, RG=3 | 12 | ns | ||
| Rise Time | tr | VGS=-4.5V, VDS=-10V ID=-2A, RG=3 | 55 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-4.5V, VDS=-10V ID=-2A, RG=3 | 15 | ns | ||
| Fall Time | tf | VGS=-4.5V, VDS=-10V ID=-2A, RG=3 | 9 | ns | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, IS=-2A | -1.5 | V | ||
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | TA=25C | -3.3 | A | ||
| TA=100C | -2.1 | A | ||||
| Maximum Power Dissipation | PD | TA=25C | 0.9 | W | ||
| Pulsed Drain Current | IDM | -13.4 | A | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | Single Operation (t 10s) | 139 | C/W | ||
2504101957_ElecSuper-SI2323DS-T1-ES_C22363748.pdf
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