Low on resistance 20V N channel enhancement mode MOSFET FM 9926A suitable for electronic applications
Key Attributes
Model Number:
9926A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
RDS(on):
30mΩ@4.5V,6A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
74.69pF@8V
Number:
2 N-Channel
Input Capacitance(Ciss):
522.3pF@8V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
8.11nC@4.5V
Mfr. Part #:
9926A
Package:
SOP-8
Product Description
Product Overview
The 9926A is a 20V N-channel enhancement mode MOSFET from SHEN ZHEN FINE MAD ELECTRONICS GROUP CO., LTD. It offers low on-resistance and is suitable for various electronic applications.
Product Attributes
- Brand: FINE MAD ELECTRONICS GROUP CO., LTD.
- Origin: Shenzhen, China
- Model: 9926A
- Document Number: S&CIC1368
- Version: 1.0
- Website: www.superchip.cn
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typical | Max | Unit |
| Absolute Maximum Ratings (TA=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | TA=25 | 6 | A | ||
| TA=70 | 4.2 | |||||
| Pulsed Drain Current | IDM | 20 | ||||
| Power Dissipation | PD | TA=25 | 2 | W | ||
| TA=70 | 1.28 | |||||
| Operating Junction and Storage Temperature | TJ, TSTG | -55 | 150 | |||
| Thermal Characteristics | ||||||
| Maximum Junction-to-Ambient Thermal Resistance | RJA | T10S | 56 | 62.5 | /W | |
| Steady-State | 81 | 110 | ||||
| Maximum Junction-to-Lead Thermal Resistance | RJL | Steady-State | 40 | 48 | /W | |
| Electrical Characteristics (TJ =25, unless otherwise noted) | ||||||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V,ID = 250uA | 20 | V | ||
| Drain-Source On-Resistance | RDS(ON) | VGS = 4.5V,IDS =6A | 21 | 30 | m | |
| VGS = 2.5V,IDS =5A | 26 | 42 | ||||
| Gate Threshold Voltage | VGS(th) | VGS = VGS,ID = 250uA | 0.5 | 0.75 | 1 | V |
| Drain-Source Leakage Current | IDSS | VDSS = 20V,VGS = 0V | 1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS = 12V,VDS = 0V | 100 | nA | ||
| Dynamic Characteristics | ||||||
| Total Gate Charge | QG | VDS = 10V,ID = 6A,VGS = 4.5V | 6.24 | 8.11 | nC | |
| Gate-Source Charge | QGS | 1.64 | 2.13 | |||
| Gate-Drain Charge | QGB | 1.34 | 1.74 | |||
| Turn-on Delay Time | Td(on) | VDD = 10V,ID = 6A | 10.4 | 20.8 | ns | |
| Rise Time | Tr | ID = 1A,VGS = 4.5V | 4.4 | 8.8 | ||
| Turn-off Delay Time | Td(off) | 27.36 | 54.72 | |||
| Fall Time | Tf | 4.16 | 8.32 | |||
| Input Capacitance | Ciss | VDS = 8V,VGS = 0V,f =1.0MHz | 522.3 | pF | ||
| Output Capacitance | Coss | 98.48 | ||||
| Reverse Transfer Capacitance | Crss | 74.69 | ||||
| Source-Drain Diode | ||||||
| Diode Maximum Forward Current | Is | 1.7 | A | |||
| Diode Forward Voltage | VSD | IS = 1.7A,VGS = 0V | 0.74 | V | ||
2410121256_FM-9926A_C85679.pdf
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