Low RDS ON N Channel Trench MOSFET FM TC736 Ideal for Power Management and Load Switch Applications
Key Attributes
Model Number:
TC736
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
RDS(on):
14mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
93pF
Output Capacitance(Coss):
127pF
Pd - Power Dissipation:
1.27W
Input Capacitance(Ciss):
610pF
Gate Charge(Qg):
12nC@4.5V
Mfr. Part #:
TC736
Package:
SOT-23
Product Description
Product Overview
The TC736 is an N-Channel Trench Power MOSFET designed for power management and load switch applications. It features low RDS(ON), super high dense cell design, and is reliable and rugged. Lead-free and green devices are available, complying with RoHS standards.
Product Attributes
- Brand: SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. (Superchip)
- Origin: China
- Certifications: RoHS Compliant (Lead Free and Green Devices Available)
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250A | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | A | ||
| Zero Gate Voltage Drain Current (TJ=125C) | IDSS | VDS=20V, VGS=0V | 30 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 0.5 | 0.8 | 1.2 | V |
| Gate Leakage Current | IGSS | VGS=10V, VDS=0V | 100 | nA | ||
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, IDS=6A | 11 | 14 | m | |
| Drain-Source On-state Resistance | RDS(ON) | VGS=2.5V, IDS=5A | 14 | 18 | m | |
| Diode Forward Voltage | VSD | ISD=1A, VGS=0V | 1 | V | ||
| Reverse Recovery Time | trr | ISD=1A, dlSD/dt=100A/s | 16 | ns | ||
| Reverse Recovery Charge | Qrr | ISD=1A, dlSD/dt=100A/s | 9 | nC | ||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 1.62 | |||
| Input Capacitance | Ciss | VGS=0V, VDS=10V, Frequency=1.0MHz | 610 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=10V, Frequency=1.0MHz | 127 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=10V, Frequency=1.0MHz | 93 | pF | ||
| Turn-on Delay Time | td(ON) | VDD=10V, IDS=6A, VGEN=4.5V,RG=6 | 9 | ns | ||
| Turn-on Rise Time | tr | VDD=10V, IDS=6A, VGEN=4.5V,RG=6 | 17 | ns | ||
| Turn-off Delay Time | td(OFF) | VDD=10V, IDS=6A, VGEN=4.5V,RG=6 | 35 | ns | ||
| Turn-off Fall Time | tf | VDD=10V, IDS=6A, VGEN=4.5V,RG=6 | 14 | ns | ||
| Total Gate Charge | Qg | VDS=16V, VGS=4.5V, IDS=6A | 12 | nC | ||
| Gate-Source Charge | Qgs | VDS=16V, VGS=4.5V, IDS=6A | 1.8 | nC | ||
| Gate-Drain Charge | Qgd | VDS=16V, VGS=4.5V, IDS=6A | 3.6 | nC |
2410010301_FM-TC736_C2932001.pdf
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