High current N channel MOSFET FM 6080D with 68V voltage rating low RDS on and fast switching speed
Key Attributes
Model Number:
6080D
Product Custom Attributes
Drain To Source Voltage:
68V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
303pF
Number:
1 N-channel
Pd - Power Dissipation:
128W
Input Capacitance(Ciss):
3.899nF@25V
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
6080D
Package:
TO-263
Product Description
Product Overview
The 6080D is a 68V N-channel enhancement mode MOSFET utilizing advanced trench technology. It offers extremely low RDS(on) with low gate charge, making it suitable for a wide variety of applications. Key features include fast switching and 100% avalanche testing.
Product Attributes
- Brand: SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. (Superchip)
- Origin: China
- Model: 6080D
- Voltage Rating: 68V
- Channel Type: N-channel
- Mode: Enhancement mode
- Package Type: TO-263
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (TC=25unless otherwise specified) | 60 | V | ||
| Drain Current - Continuous (TC= 25C) | ID | 80 | A | |||
| Drain Current - Continuous (TC= 70C) | ID | 64* | A | |||
| Drain Current - Pulsed (Note 1) | IDM | 280* | A | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Single Pulsed Avalanche Energy (Note 2) | EAS | 405 | mJ | |||
| Repetitive Avalanche Energy (Note 1) | EAR | 46 | mJ | |||
| Peak diode recovery dv/dt (note 3) | dv/dt | 5 | V/ns | |||
| Power Dissipation (TC = 25C) | PD | 128 | W | |||
| Derate above 25C | 1.2 | W/C | ||||
| Operating and Storage Temperature Range | Tj ,Tstg | -55 | +150 | C | ||
| Maximum lead temperature for soldering, purpose, 1/8 from case for 5 seconds | T | 300 | C | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | JC | 0.56 | C/W | |||
| Thermal Resistance, Junction-to-Ambient | JA | 58.7 | C/W | |||
| Features | ||||||
| Extremely Low RDS(on): Typ.RDS(on) = 7.0m @VGS=10 V,Id=40 A | ||||||
| Low gate charge ( typical 75 nC) | ||||||
| Fast switching | ||||||
| 100% avalanche tested | ||||||
| Electrical Characteristics (TC=25unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0 V, ID = 250 A | 68 | V | ||
| Breakdown Voltage Temperature Coefficient | BVDSS/Tj | ID= 250 A, Referenced to 25C | 58 | mV/C | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 68 V, VGS = 0 V | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 54 V, TC = 125C | 10 | A | ||
| Gate Leakage Current, Forward | IGSSF | VGS = 20 V, VDS = 0 V | 100 | nA | ||
| Gate Leakage Current, Reverse | IGSSR | VGS = -20 V, VDS = 0 V | -100 | nA | ||
| Gate Threshold voltage | VGS(TH) | VDS = VGS, ID = 250 uA | 2 | 3 | 4 | V |
| Drain-Source on-state resistance | RDS(On) | VGS = 10 V, ID = 40 A | 7.0 | 9.2 | m | |
| Forward Transconductance | gFS | VDS = 10 V, ID = 40 A(Note 3) | 34.0 | S | ||
| Input capacitance | Ciss | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 3899 | pF | ||
| Output capacitance | Coss | 321 | pF | |||
| Reverse transfer capacitance | Crss | 303 | pF | |||
| Turn On Delay Time | td(on) | VDD = 35 V, ID = 40 A, VGS = 10 V, RG = 4.7 (Note 3, 4) | 20 | ns | ||
| Rising Time | tr | 52 | ns | |||
| Turn Off Delay Time | td(off) | 49 | ns | |||
| Fall Time | tf | 23 | ns | |||
| Total Gate Charge | Qg | VDS = 35 V, ID = 40 A, VGS = 10 V (Note 3, 4) | 75 | nC | ||
| Gate-Source Charge | Qgs | 26 | nC | |||
| Gate-Drain Charge | Qgd | 20 | nC | |||
| Gate Resistance | Rg | VDS = 0 V, Scan F mode | 2.0 | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 80 | A | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 280 | A | |||
| Diode Forward Voltage | VSD | VGS= 0 V, IS = 40 A | 1.2 | V | ||
| Reverse recovery current | Irrm | IS= 40A, VGS = 0V, dIF/dt = 100A/us | -1.4 | A | ||
| Reverse recovery time | Trr | 23 | ns | |||
| Reverse recovery charge | Qrr | 16 | nC | |||
2411121101_FM-6080D_C2932022.pdf
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