P channel MOSFET featuring low on resistance and fast switching FETek FKS3115 for power management
Key Attributes
Model Number:
FKS3115
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
14A
RDS(on):
8.7mΩ@10V,12A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
421pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.448nF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
30nC@4.5V
Mfr. Part #:
FKS3115
Package:
SOP-8
Product Description
Product Overview
The FKS3115 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent on-resistance (RDSON) and low gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: FETek
- Product Line: FKS3115
- Type: P-Channel MOSFET
- Certifications: RoHS, Green Product
- Key Features: 100% EAS Guaranteed, Green Device Available, Super Low Gate Charge, Excellent CdV/dt effect decline, Advanced high cell density Trench technology
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit | Notes |
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V | -14 | A | 1 | ||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V | -11 | A | 1 | ||
| IDM | Pulsed Drain Current | -56 | A | 2 | ||
| EAS | Single Pulse Avalanche Energy | 151 | mJ | 3 | ||
| IAS | Avalanche Current | -55 | A | |||
| PD@TA=25 | Total Power Dissipation | 1.5 | W | 4 | ||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient | 40 | /W | 1 (t≤10s) | ||
| RJA | Thermal Resistance Junction-Ambient | 75 | /W | 1 | ||
| RJC | Thermal Resistance Junction-Case | 24 | /W | 1 | ||
| BVDSS | Drain-Source Breakdown Voltage | -30 | V | VGS=0V , ID=-250uA | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | -0.018 | V/ | Reference to 25 , ID=-1mA | ||
| RDS(ON) | Static Drain-Source On-Resistance | 8.7 | mΩ | 2, VGS=-10V , ID=-12A | ||
| RDS(ON) | Static Drain-Source On-Resistance | 13.5 | mΩ | 2, VGS=-4.5V , ID=-10A | ||
| VGS(th) | Gate Threshold Voltage | -1.2 | -2.5 | V | VGS=VDS , ID =-250uA | |
| ΔVGS(th) | VGS(th) Temperature Coefficient | 5.04 | mV/ | |||
| IDSS | Drain-Source Leakage Current | -1 | μA | VDS=-24V , VGS=0V , TJ=25 | ||
| IDSS | Drain-Source Leakage Current | -5 | μA | VDS=-24V , VGS=0V , TJ=55 | ||
| IGSS | Gate-Source Leakage Current | ±100 | nA | VGS=±20V , VDS=0V | ||
| gfs | Forward Transconductance | 25 | S | VDS=-5V , ID=-12A | ||
| Qg | Total Gate Charge | 30 | nC | (-4.5V) VDS=-15V , VGS=-4.5V , ID=-12A | ||
| Qgs | Gate-Source Charge | 10 | nC | |||
| Qgd | Gate-Drain Charge | 10.4 | nC | |||
| Td(on) | Turn-On Delay Time | 9.4 | ns | VDD=-15V , VGS=-10V , RG=3.3Ω, ID=-1A | ||
| Tr | Rise Time | 10.2 | ns | |||
| Td(off) | Turn-Off Delay Time | 117 | ns | |||
| Tf | Fall Time | 24 | ns | |||
| Ciss | Input Capacitance | 3448 | pF | VDS=-15V , VGS=0V , f=1MHz | ||
| Coss | Output Capacitance | 508 | pF | |||
| Crss | Reverse Transfer Capacitance | 421 | pF | |||
| IS | Continuous Source Current | -14 | A | 1,5, VG=VD=0V , Force Current | ||
| ISM | Pulsed Source Current | -56 | A | 2,5 | ||
| VSD | Diode Forward Voltage | -1.2 | V | 2, VGS=0V , IS=-1A , TJ=25 | ||
| trr | Reverse Recovery Time | 19.4 | nS | IF=-10A , dI/dt=100A/μs , TJ=25 | ||
| Qrr | Reverse Recovery Charge | 9.1 | nC |
Notes:
1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%.
3. The EAS data shows Max. rating. The test condition is VDD=-25V, VGS=-10V, L=0.1mH, IAS=-55A.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121538_FETek-FKS3115_C5361873.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
