synchronous buck converter p channel mosfet FETek FKD3031 with super low gate charge characteristics
Key Attributes
Model Number:
FKD3031
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
70A
RDS(on):
7.2mΩ@4.5V,15A
Gate Threshold Voltage (Vgs(th)):
1.2V
Number:
1 P-Channel
Pd - Power Dissipation:
90W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
FKD3031
Package:
TO-252
Product Description
Product Overview
The FKD3031 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements with 100% EAS guaranteed and full function reliability approved. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: FETek Technology Corp.
- Product Type: P-Ch 30V Fast Switching MOSFETs
- Certifications: RoHS, Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V | -70 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V | -50 | A | |||
| IDM | Pulsed Drain Current | -200 | A | |||
| EAS | Single Pulse Avalanche Energy | 80 | mJ | |||
| IAS | Avalanche Current | -40 | A | |||
| PD@TC=25 | Total Power Dissipation | 90 | W | |||
| TSTG | Storage Temperature Range | -55 | 175 | |||
| TJ | Operating Junction Temperature Range | -55 | 175 | |||
| RJA | Thermal Resistance Junction-ambient (Steady State) | 50 | /W | |||
| RJC | Thermal Resistance Junction-case | 1.6 | /W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-20A | 6 | 7.2 | mΩ | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-4.5V , ID=-15A | 9.5 | 12 | mΩ | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.2 | -2.5 | V | |
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=25 | -1 | µA | ||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=55 | -5 | µA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.2 | Ω | ||
| Qg | Total Gate Charge (-10V) | VDS=-15V , VGS=-10V , ID=-18A | 60 | nC | ||
| Qgs | Gate-Source Charge | 9 | nC | |||
| Qgd | Gate-Drain Charge | 15 | nC | |||
| Td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3Ω, ID=-20A | 17 | ns | ||
| Tr | Rise Time | 40 | ns | |||
| Td(off) | Turn-Off Delay Time | 55 | ns | |||
| Tf | Fall Time | 13 | ns | |||
| Ciss | Input Capacitance | VDS=-25V , VGS=0V , f=1MHz | 3450 | pF | ||
| Coss | Output Capacitance | 255 | pF | |||
| Crss | Reverse Transfer Capacitance | 140 | pF | |||
| IS | Continuous Source Current | VG=VD=0V , Force Current | -70 | A | ||
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| trr | Reverse Recovery Time | IF=-20A , di/dt=100A/µs , TJ=25 | 22 | ns | ||
| Qrr | Reverse Recovery Charge | 72 | nC |
2411220305_FETek-FKD3031_C5440238.pdf
Related Products
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
