Low Gate Charge N Channel MOSFET FETek FKBA6006 with High Cell Density Trench and RoHS Certification
Key Attributes
Model Number:
FKBA6006
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
40A
RDS(on):
18mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
97pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
59W
Input Capacitance(Ciss):
-
Gate Charge(Qg):
19.3nC@4.5V
Mfr. Part #:
FKBA6006
Package:
PRPAK5X6
Product Description
Product Overview
The FKBA6006 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: FETek Technology Corp.
- Product Line: FKBA6006
- Type: N-Ch Fast Switching MOSFET
- Certifications: RoHS, Green Product
- Key Features: 100% EAS Guaranteed, Green Device Available, Super Low Gate Charge, Excellent CdV/dt effect decline, Advanced high cell density Trench technology
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | Drain-Source Voltage (VDS) | 60 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | ||||
| Continuous Drain Current (ID@TC=25) | VGS @ 10V1 | 40 | A | |||
| Continuous Drain Current (ID@TC=100) | VGS @ 10V1 | 25 | A | |||
| Continuous Drain Current (ID@TA=25) | VGS @ 10V1 | 7.4 | A | |||
| Continuous Drain Current (ID@TA=70) | VGS @ 10V1 | 6 | A | |||
| Thermal Data | Thermal Resistance Junction-Ambient (RJA) | --- | 62 | °C/W | ||
| Thermal Resistance Junction-Case (RJC) | 1 | --- | 2.1 | °C/W | ||
| Storage Temperature Range (TSTG) | -55 | 150 | °C | |||
| Electrical Characteristics | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 60 | --- | --- | V |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=20A2 | --- | --- | 18 | mΩ | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=25 | --- | --- | 1 | µA | |
| Total Gate Charge (Qg) | VDS=48V , VGS=4.5V , ID=15A | --- | 19.3 | --- | nC | |
| Diode Characteristics | Continuous Source Current (IS) | VG=VD=0V , Force Current1,5 | --- | --- | 40 | A |
| Pulsed Source Current (ISM) | 2,5 | --- | --- | 80 | A | |
| Diode Forward Voltage (VSD) | VGS=0V , IS=A , TJ=252 | --- | --- | 1 | V | |
| Reverse Recovery Time (trr) | IF=15A , dI/dt=100A/µs , TJ=25 | --- | --- | 16.3 | nS |
2411220218_FETek-FKBA6006_C5361881.pdf
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