Fast Switching P channel 20V MOSFET with Low Gate Charge and Reduced Cdv dt Effect FETek FKUC2301
Key Attributes
Model Number:
FKUC2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
135mΩ@2.5V,2A
Gate Threshold Voltage (Vgs(th)):
600mV
Reverse Transfer Capacitance (Crss@Vds):
73pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
677pF@15V
Gate Charge(Qg):
10.1nC@4.5V
Mfr. Part #:
FKUC2301
Package:
SOT-23S
Product Description
Product Overview
The FKUC2301 is a P-channel, 20V Fast Switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for small power switching and load switch applications. This device meets RoHS and Green Product requirements with full function reliability approval. Key advantages include low gate charge and reduced Cdv/dt effect.
Product Attributes
- Brand: FETek Technology Corp.
- Product Series: FKUC2301
- Channel Type: P-Ch
- Voltage Rating: 20V
- Switching Speed: Fast
- Certifications: RoHS, Green Product
- Package: SOT23S
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | VGS=0V | -20 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-4.5V, ID=-3A | 76 | 100 | m | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-2.5V, ID=-2A | 110 | 135 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID =-250uA | -0.45 | -0.6 | -1.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=-16V, VGS=0V, TJ=25 | -1 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=12V, VDS=0V | 100 | nA | ||
| Qg | Total Gate Charge | VDS=-15V, VGS=-4.5V, ID=-3A | 10.1 | nC | ||
| Ciss | Input Capacitance | VDS=-15V, VGS=0V, f=1MHz | 677 | pF | ||
| Coss | Output Capacitance | VDS=-15V, VGS=0V, f=1MHz | 82 | pF | ||
| Crss | Reverse Transfer Capacitance | VDS=-15V, VGS=0V, f=1MHz | 73 | pF | ||
| IS | Continuous Source Current | VG=VD=0V | -3 | A | ||
| VSD | Diode Forward Voltage | VGS=0V, IS=-1A, TJ=25 | -1 | V |
| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | -20 | V |
| VGS | Gate-Source Voltage | 12 | V |
| ID@TA=25 | Continuous Drain Current, VGS @ -4.5V | -3.3 | A |
| ID@TA=70 | Continuous Drain Current, VGS @ -4.5V | -2.6 | A |
| IDM | Pulsed Drain Current | -13 | A |
| PD@TA=25 | Total Power Dissipation | 1.4 | W |
| TSTG | Storage Temperature Range | -55 to 150 | |
| TJ | Operating Junction Temperature Range | -55 to 150 |
| Symbol | Parameter | Conditions | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| RJA | Thermal Resistance Junction-ambient | 125 | /W | ||
| RJA | Thermal Resistance Junction-ambient | (t10s) | 90 | /W |
2411192311_FETek-FKUC2301_C5361876.pdf
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