High Cell Density Complementary MOSFETs FETek FKS4907 N Channel and P Channel for Power Applications
Key Attributes
Model Number:
FKS4907
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
10A
RDS(on):
70mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF@15V
Pd - Power Dissipation:
3.1W
Input Capacitance(Ciss):
1.004nF@15V
Gate Charge(Qg):
9.1nC@4.5V
Mfr. Part #:
FKS4907
Package:
SOP-8
Product Description
FKS4907 N-Ch and P-Ch Fast Switching MOSFETs
The FKS4907 is a high-performance complementary N-channel and P-channel MOSFET pair featuring high cell density. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. The FKS4907 meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability.
Product Attributes
- Brand: FETek Technology Corp.
- Certifications: RoHS, Green Product
Technical Specifications
| Parameter | N-Ch | P-Ch | Unit | Conditions |
| Drain-Source Voltage (VDS) | 40 | -40 | V | |
| Gate-Source Voltage (VGS) | 20 | 20 | V | |
| Continuous Drain Current (ID@TC=25, VGS @ 10V) | 10 | -7.5 | A | |
| Continuous Drain Current (ID@TC=100, VGS @ 10V) | 8 | -5.7 | A | |
| Pulsed Drain Current (IDM) | 20 | -15 | A | |
| Single Pulse Avalanche Energy (EAS) | 31 | 36 | mJ | |
| Avalanche Current (IAS) | 25 | -27 | A | |
| Total Power Dissipation (PD@TC=25) | 3.1 | 3.1 | W | |
| Storage Temperature Range (TSTG) | -55 to 150 | -55 to 150 | ||
| Operating Junction Temperature Range (TJ) | -55 to 150 | -55 to 150 | ||
| Thermal Resistance Junction-Ambient (RJA) | --- | 85 | /W | |
| Thermal Resistance Junction-Case (RJC) | --- | 40 | /W | |
| Drain-Source Breakdown Voltage (BVDSS) | 40 | -40 | V | VGS=0V, ID=250uA (N-Ch) / -250uA (P-Ch) |
| Static Drain-Source On-Resistance (RDS(ON)) | 18 | 40 | m | VGS=10V, ID=10A (N-Ch) / VGS=-10V, ID=-6A (P-Ch) |
| Gate Threshold Voltage (VGS(th)) | 1.0 - 2.5 | -1.0 - -2.5 | V | VGS=VDS, ID=250uA (N-Ch) / -250uA (P-Ch) |
| Drain-Source Leakage Current (IDSS) | 1 | 1 | uA | VDS=32V, VGS=0V, TJ=25 |
| Gate-Source Leakage Current (IGSS) | 100 | 100 | nA | VGS=20V, VDS=0V |
| Total Gate Charge (Qg) | 9.1 | 9 | nC | VGS=10V, ID=10A (N-Ch) / VGS=-4.5V, ID=-6A (P-Ch) |
| Input Capacitance (Ciss) | 1013 | 1004 | pF | VDS=15V, VGS=0V, f=1MHz (N-Ch) / VDS=-15V, VGS=0V, f=1MHz (P-Ch) |
| Output Capacitance (Coss) | 107 | 108 | pF | VDS=15V, VGS=0V, f=1MHz (N-Ch) / VDS=-15V, VGS=0V, f=1MHz (P-Ch) |
| Reverse Transfer Capacitance (Crss) | 76 | 80 | pF | VDS=15V, VGS=0V, f=1MHz (N-Ch) / VDS=-15V, VGS=0V, f=1MHz (P-Ch) |
| Continuous Source Current (IS) | 10 | -7.5 | A | VG=VD=0V, Force Current |
| Pulsed Source Current (ISM) | 20 | -15 | A | |
| Diode Forward Voltage (VSD) | 1 | -1 | V | VGS=0V, IS=1A (N-Ch) / IS=-1A (P-Ch), TJ=25 |
2411220211_FETek-FKS4907_C2926961.pdf
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