Low RDS on N channel MOSFET FM 6888K with 68 volt drain source voltage and avalanche energy rating
Key Attributes
Model Number:
6888K
Product Custom Attributes
Drain To Source Voltage:
68V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
7.9mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
312pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
3.988nF@25V
Pd - Power Dissipation:
108W
Gate Charge(Qg):
78nC@10V
Mfr. Part #:
6888K
Package:
TO-252
Product Description
Product Overview
The 6888K is a 68V N-channel enhancement mode MOSFET from SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. Utilizing advanced trench technology, it offers extremely low RDS(on) and low gate charge, making it suitable for a wide range of applications requiring fast switching performance. The device is 100% avalanche tested.
Product Attributes
- Brand: SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
- Model: 6888K
- Origin: China
- Certifications: S&CIC1741 (File Number)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 68 | V | |||
| Drain Current - Continuous (TC= 25C) | ID | 80 | A | |||
| Drain Current - Continuous (TC= 70C) | ID | 52* | A | |||
| Drain Current - Pulsed (Note 1) | IDM | 208* | A | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Single Pulsed Avalanche Energy (Note 2) | EAS | 285 | mJ | |||
| Repetitive Avalanche Energy (Note 1) | EAR | 40 | mJ | |||
| Peak diode recovery dv/dt (note 3) | dv/dt | 5.5 | V/ns | |||
| Power Dissipation (TC = 25C) | PD | 108 | W | |||
| Derate above 25C | 1.6 | W/C | ||||
| Operating and Storage Temperature Range | Tj ,Tstg | -55 | +150 | C | ||
| Maximum lead temperature for soldering,purpose, 1/8 from case for 5 seconds | T | 280 | C | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 0.58 | C/W | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 62.8 | C/W | |||
| Features | ||||||
| RDS(on) | VGS= 10 V, Id=30 A | 7.9 | m | |||
| Gate charge | Qg | 75 | nC | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0 V, ID = 250 A | 68 | V | ||
| Breakdown Voltage Temperature Coefficient | BVDSS/Tj | ID= 250 A, Referenced to 25C | 68 | mV/C | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 60 V, VGS = 0 V | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 50 V, TC = 125C | 10 | A | ||
| Gate Leakage Current, Forward | IGSSF | VGS = 20 V, VDS = 0 V | 100 | nA | ||
| Gate Leakage Current, Reverse | IGSSR | VGS = -20 V, VDS = 0 V | -100 | nA | ||
| Gate Threshold voltage | VGS(TH) | VDS = VGS, ID = 250 uA | 2 | 3 | 4 | V |
| Drain-Source on-state resistance | RDS(On) | VGS = 10 V, ID = 30 A | 7.9 | 9.5 | m | |
| Forward Transconductance | gFS | VDS = 10 V, ID = 30 A(Note 3) | 34.0 | S | ||
| Input capacitance | Ciss | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 3988 | pF | ||
| Output capacitance | Coss | 339 | pF | |||
| Reverse transfer capacitance | Crss | 312 | pF | |||
| Turn On Delay Time | td(on) | VDD = 35 V, ID = 40 A, VGS = 10 V, RG = 4.7 (Note 3, 4) | 22 | ns | ||
| Rising Time | tr | 54 | ns | |||
| Turn Off Delay Time | td(off) | 50 | ns | |||
| Fall Time | tf | 25 | ns | |||
| Total Gate Charge | Qg | VDS = 35 V, ID = 40 A, VGS = 10 V (Note 3, 4) | 78 | nC | ||
| Gate-Source Charge | Qgs | 26 | nC | |||
| Gate-Drain Charge | Qgd | 22 | nC | |||
| Gate Resistance | Rg | VDS = 0 V, Scan F mode | 2.4 | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 80 | A | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 208 | A | |||
| Diode Forward Voltage | VSD | VGS= 0 V, IS = 40 A | 1.2 | V | ||
| Reverse recovery current | Irrm | IS= 40A, VGS = 0V, dIF/dt = 100A/us | -1.2 | A | ||
| Reverse recovery time | Trr | 25 | ns | |||
| Reverse recovery charge | Qrr | 19 | nC | |||
2409300233_FM-6888K_C841306.pdf
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