High collector current NPN transistor FUXINSEMI SS8550 in SOT-23 package for versatile applications
Key Attributes
Model Number:
SS8550
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
SS8550
Package:
SOT-23
Product Description
Product Overview
The Fuxin Semiconductor SS8050 is a high collector current NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers complementary characteristics to the SS8550 and is suitable for various electronic circuits requiring efficient current amplification.
Product Attributes
- Brand: Fuxin Semiconductor
- Package Type: SOT-23
- Marking Code: Y2
- Complementary to: SS8550
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=-100A, IE=0 | -40 | V | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=-0.1mA, IB=0 | -25 | V | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=-100A, IC=0 | -5 | V | ||
| Collector Cut-off Current | ICBO | VCB=-40V, IE=0 | -100 | nA | ||
| Collector Cut-off Current | ICEO | VCE=-20V, IB=0 | -100 | nA | ||
| Emitter Cut-off Current | IEBO | VEB=-5V, IC=0 | -100 | nA | ||
| DC Current Gain | hFE(1) | VCE=-1V, IC=-100mA | 120 | 400 | ||
| hFE(2) | VCE=-1V, IC=-800mA | 40 | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=-800mA, IB=-80mA | -0.5 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat) | IC=-800mA, IB=-80mA | -1.2 | V | ||
| Base-Emitter Voltage | VBE | VCE=-1V, IC=-10mA | -1 | V | ||
| Transition Frequency | fT | VCE=-10V,IC=-50mA , f=30MHz | 100 | MHz | ||
| Collector Output Capacitance | Cob | VCB=-10V, IE=0, f=1MHz | 20 | pF | ||
| Collector Current | IC | Ta=25 | -1.5 | A | ||
| Collector Power Dissipation | PC | Ta=25 | 300 | mW | ||
| Thermal Resistance Junction To Ambient | RJA | 417 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 |
2409272301_FUXINSEMI-SS8550_C908251.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
