ESD protected FMS Formosa Microsemi AS3415E P Channel TrenchFET MOSFET in plastic encapsulate SOT 23
Key Attributes
Model Number:
AS3415E
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-
RDS(on):
73mΩ@1.8V,2A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Output Capacitance(Coss):
205pF
Input Capacitance(Ciss):
1.45nF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
-
Mfr. Part #:
AS3415E
Package:
SOT-23
Product Description
Product Overview
The AS3415E is a P-Channel TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It features ESD protection and is housed in a SOT-23 package.
Product Attributes
- Brand: anbonsemi
- Package Type: SOT-23
- Material: Plastic-Encapsulate MOSFETS
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
| Drain-Source Voltage | BVDSS | -20 | - | - | V |
| Gate-Source Voltage | VGS | - | - | +8 | V |
| Drain Current (continuous) | ID | - | - | -4 | A |
| Drain Current (pulsed) | IDM | - | - | -17 | A |
| ESD (HBM) | - | - | 2500 | V | |
| Total Device Dissipation (Ta=25) | PD | - | - | 1000 | mW |
| Junction Temperature | TJ | - | - | 150 | |
| Storage Temperature | Tstg | -55 | - | +150 | |
| Drain-Source Breakdown Voltage (ID = -250uA,VGS=0V) | BVDSS | -20 | - | - | V |
| Gate Threshold Voltage (ID = -250uA,VGS= VDS) | VGS(th) | -0.3 | - | -1 | V |
| Diode Forward Voltage Drop (IS= -0.75A,VGS=0V) | VSD | - | - | -1.5 | V |
| Zero Gate Voltage Drain Current (VGS=0V, VDS= -16V) | IDSS | - | - | -1 | uA |
| Zero Gate Voltage Drain Current (VGS=0V, VDS= -16V, TA=55) | IDSS | - | - | -10 | uA |
| Gate Body Leakage (VGS=+8V, VDS=0V) | IGSS | - | - | +10 | uA |
| Static Drain-Source On-State Resistance (ID= -4A,VGS= -4.5V) | RDS(ON) | - | 35 | 43 | m |
| Static Drain-Source On-State Resistance (ID= -3A,VGS= -2.5V) | RDS(ON) | - | 45 | 54 | m |
| Static Drain-Source On-State Resistance (ID= -2A,VGS= -1.8V) | RDS(ON) | - | 56 | 73 | m |
| Input Capacitance (VGS=0V, VDS= -10V,f=1MHz) | CISS | - | 1450 | - | pF |
| Output Capacitance (VGS=0V, VDS= -10V,f=1MHz) | COSS | - | 205 | - | pF |
| Turn-ON Time (VDS= -10V, ID= -2.8A, RGEN=6) | t(on) | - | 9.5 | - | ns |
| Turn-OFF Time (VDS= -10V, ID= -2.8A, RGEN=6) | t(off) | - | 94 | - | ns |
2410121505_FMS-Formosa-Microsemi-AS3415E_C191733.pdf
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