Silicon N channel VDMOSFET Fortior Tech FMD5N50E5 Suitable for Miniaturized Power Switching Systems
Key Attributes
Model Number:
FMD5N50E5
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.25Ω@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9.5pF
Number:
1 N-channel
Output Capacitance(Coss):
79pF
Input Capacitance(Ciss):
775pF
Pd - Power Dissipation:
7W
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
FMD5N50E5
Package:
TO-252
Product Description
Product Overview
The FMD5N50E5 is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This technology enhances efficiency by reducing conduction loss, improving switching performance, and increasing avalanche energy. It is suitable for various power switching circuits, enabling system miniaturization and higher efficiency. The device comes in a RoHS-compliant TO-252 package.
Key features include a fast body diode that eliminates the need for external diodes in ZVS applications, lower gate charge for simpler drive requirements, and a higher gate voltage threshold for improved noise immunity.
Product Attributes
- Brand: FortiorTech
- Origin: China (implied by www.fortiortech.com)
- Material: Silicon N-channel
- Package: TO-252
- Certifications: RoHS standard
Technical Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Units | |
| Absolute Maximum Ratings (Tc=25C unless otherwise specified) | ||||||
| VDSS | Drain-to-Source Voltage | 500 | V | |||
| ID | Continuous Drain Current | 5 | A | |||
| ID | Continuous Drain Current (TC = 25C) | 5 | A | |||
| IDM | Pulsed Drain Current | 20 | A | |||
| VGS | Gate-to-Source Voltage | ±30 | V | |||
| EAS | Single Pulse Avalanche Energy | 3 | mJ | |||
| EAR | Avalanche Energy, Repetitive | 3 | mJ | |||
| IAR | Avalanche Current | 8 | A | |||
| dv/dt | Peak Diode Recovery dv/dt | 5 | V/ns | |||
| PD | Power Dissipation | 7 | W | |||
| Derating Factor above 25C | 0.05 | W/C | ||||
| TJ, Tstg | Operating Junction and Storage Temperature | -55 | 150 | C | ||
| TL | Maximum Temperature for Lead | 300 | C | |||
| OFF Characteristics | ||||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | 500 | V | ||
| ΔBVDSS/ΔTJ | Bvdss Temperature Coefficient | ID=250uA, Reference 25C | 0.55 | V/C | ||
| ID | Drain to Source Leakage Current | VDS =500V, VGS= 0V, Ta = 25C | 1 | µA | ||
| ID | Drain to Source Leakage Current | VDS =400V, VGS= 0V, Ta = 125C | 10 | µA | ||
| IGSS(F) | Gate to Source Forward Leakage | VGS= 30V | 100 | nA | ||
| IGSS(R) | Gate to Source Reverse Leakage | VGS =-30V | -100 | nA | ||
| ON Characteristics (Tc= 25C unless otherwise specified) | ||||||
| RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=2.5A | 1.25 | 1.5 | Ω | |
| VGS(TH) | Gate Threshold Voltage | VDS = VGS, ID = 250µA | 3.0 | 5.0 | V | |
| Dynamic Characteristics | ||||||
| gfs | Forward Transconductance | VDS=15V, ID =2.5A | 5.0 | S | ||
| Ciss | Input Capacitance | VGS =0 V, VDS = 25V, f = 1.0MHz | 775 | pF | ||
| Coss | Output Capacitance | VGS =0 V, VDS = 25V, f = 1.0MHz | 79 | pF | ||
| Crss | Reverse Transfer Capacitance | VGS =0 V, VDS = 25V, f = 1.0MHz | 9.5 | pF | ||
| Resistive Switching Characteristics | ||||||
| td(ON) | Turn-on Delay Time | ID =5A, VDD = 250V, RG =25Ω | 12 | ns | ||
| tr | Rise Time | ID =5A, VDD = 250V, RG =25Ω | 46 | ns | ||
| td(OFF) | Turn-Off Delay Time | ID =5A, VDD = 250V, RG =25Ω | 50 | ns | ||
| tf | Fall Time | ID =5A, VDD = 250V, RG =25Ω | 48 | ns | ||
| Qg | Total Gate Charge | ID = 5A, VDD =250V, VGS = 10V | 19 | nC | ||
| Qgs | Gate to Source Charge | ID = 5A, VDD =250V, VGS = 10V | 4.0 | nC | ||
| Qgd | Gate to Drain (Miller)Charge | ID = 5A, VDD =250V, VGS = 10V | 8.0 | nC | ||
| Source-Drain Diode Characteristics | ||||||
| IS | Continuous Source Current (Body Diode) | 5 | A | |||
| ISM | Maximum Pulsed Current (Body Diode) | 20 | A | |||
| VSD | Diode Forward Voltage | IS=5.0A,VGS=0V | 1.5 | V | ||
| trr | Reverse Recovery Time | IS=5.0A, Tj = 25C, dIF/dt=100A/µs, VGS=0V | 85 | ns | ||
| Qrr | Reverse Recovery Charge | IS=5.0A, Tj = 25C, dIF/dt=100A/µs, VGS=0V | 265 | nC | ||
| Thermal Characteristics | ||||||
| RθJC | Junction-to-Case | 1.67 | °C/W | |||
| RθJA | Junction-to-Ambient | 62.5 | °C/W | |||
Applications
- Motor Control applications
- Uninterruptible Power Supplies
- Zero Voltage Switching SMPS
2411011654_Fortior-Tech-FMD5N50E5_C328454.pdf
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