N Channel Enhancement Mode MOSFET FM 8205LA 20V 6A Drain Current Suitable for High Power Electronics
Key Attributes
Model Number:
8205LA
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
RDS(on):
22mΩ@4.5V,4.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
950mV
Reverse Transfer Capacitance (Crss@Vds):
51pF@10V
Number:
1 N-channel
Pd - Power Dissipation:
1.98W
Input Capacitance(Ciss):
550pF@10V
Gate Charge(Qg):
8.5nC@4.5V
Mfr. Part #:
8205LA
Package:
TSSOP-8
Product Description
8205LA 20V N-Channel Enhancement-Mode MOSFET
The 8205LA is a 20V N-Channel Enhancement-Mode MOSFET from Fine Made Microelectronics Group Co., Ltd. It features a proprietary advanced planar technology for high-density, ultra-low resistance design, making it suitable for high-power, high-current applications and ideal for lithium battery applications. The device is available in a TSSOP-8 package.
Product Attributes
- Brand: (FINE MADE MICROELECTRONICS GROUP CO., LTD.)
- Model: 8205LA
- Document Number: S&CIC2214
- Version: 1.2
- Website: www.superchip.cn
- Package: TSSOP-8
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typical | Max | Unit |
| Maximum Ratings and Thermal Characteristics (Ta = 25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | ||||
| Drain Current | ID | 6 | A | |||
| Drain Pulse Current | IDM | 20 | ||||
| Maximum Power Dissipation | PD | TA = 25 | 1.98 | W | ||
| TA = 75 | 1.30 | |||||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | to | 150 | ||
| Thermal Resistance, Junction-to-Ambient (PCB mounted) | RJA | 61.4 | /W | |||
| Electrical Characteristics (Ta = 25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250uA | 20 | -- | -- | V |
| Drain-Source On-Resistance | RDS(on) | VGS = 2.5V, ID = 3.0A | 26.0 | 29.0 | mΩ | |
| VGS = 4.0V, ID = 4.0A | 23.0 | 26.0 | ||||
| VGS = 4.5V, ID = 4.5A | 22.0 | 24.0 | ||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250uA | 0.5 | 0.75 | 0.95 | V |
| Drain Cutoff Current | IDSS | VDS = 20V, VGS = 0V | -- | -- | 1 | uA |
| Gate Leakage Current | IGSS | VGS = ±12V, ID=0uA | -- | -- | ±100 | nA |
| Forward Transconductance | gfs | VDS = 15V, ID = 6.0A | -- | 25 | -- | S |
| Dynamic Characteristics | ||||||
| Total Gate Charge | Qg | VDS = 10V, ID = 6A, VGS = 4.5V | 7.49 | 8.50 | nC | |
| Gate-Source Charge | Qgs | 2.48 | 2.96 | |||
| Gate-Drain Charge | Qgd | 2.04 | 2.65 | |||
| Turn-on Delay Time | td(on) | VDD = 10V, ID = 6A, ID = 1A, VGS = 4.5V | 17.5 | 29.8 | ns | |
| Rise Time | tr | 28.5 | 38.2 | |||
| Turn-off Delay Time | td(off) | 41.2 | 59.6 | |||
| Fall Time | tf | 10.4 | 26.3 | |||
| Input Capacitance | Ciss | VDS = 10V, VGS = 0V, f=1.0MHz | 550 | -- | pF | |
| Output Capacitance | Coss | 58 | -- | |||
| Reverse Transfer Capacitance | Crss | 51 | -- | |||
| Diode Characteristics | ||||||
| Diode Maximum Forward Current | IS | -- | -- | 2.0 | A | |
| Diode Forward Voltage | VSD | IS = 1.7A, VGS = 0V | -- | -- | 1.2 | V |
2410121337_FM-8205LA_C7420387.pdf
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