Fortior Tech FMD3N60E5 Power MOSFET featuring fast body diode and improved noise immunity for power switching
Key Attributes
Model Number:
FMD3N60E5
Product Custom Attributes
Mfr. Part #:
FMD3N60E5
Package:
TO-252T
Product Description
Product Overview
The FMD3N60E5 is an N-channel Power MOSFET designed for high-efficiency applications. Its features include a fast body diode that eliminates the need for external diodes in Zero Voltage Switching (ZVS) applications, lower gate charge for simpler drive requirements, and a higher gate voltage threshold for improved noise immunity. This MOSFET offers low on-resistance and is RoHS compliant, making it suitable for motor control, uninterruptible power supplies, and Zero Voltage Switching SMPS applications.
Product Attributes
- Brand: Fortior Technology
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-to-Source Voltage | VDSS | 600 | V | |||
| Continuous Drain Current | ID | Tc= 25 | 3* | A | ||
| Continuous Drain Current | ID | TC = 100 C | 1.95* | A | ||
| Pulsed Drain Current | IDM | 12* | A | |||
| Gate-to-Source Voltage | VGS | 30 | V | |||
| Single Pulse Avalanche Energy | EAS | 157 | mJ | |||
| Avalanche Energy, Repetitive | EAR | 15 | mJ | |||
| Avalanche Current | IAR | 1.7 | A | |||
| Power Dissipation | PD | 54 | W | |||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/nS | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | 55 | 150 | |||
| Drain-source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 600 | V | ||
| Breakdown Voltage Temperature Coefficient | BVDSS/ Tj | ID=250uA, Referenced to 25C | 0.6 | V/C | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250A | 2.0 | 4.0 | V | |
| Drain-source Leakage Current | IDSS | VDS =600V,VGS =0V, Tj=25C | 1 | A | ||
| Drain-source Leakage Current | IDSS | VDS =480V,VGS =0V, Tj=125C | 100 | A | ||
| Forward Transconductance | gfs | VDS =15V, ID=1.5A | 2.6 | S | ||
| Gate-body Leakage Current | IGSS | VDS =0V,VGS =30V | 100 | nA | ||
| Drain-source On Resistance | RDS(ON) | VGS =10V, ID=1.5A | 2.6 | 3.2 | ||
| Input Capacitance | Ciss | VGS = 0V, VDS = 25V F = 1.0MHZ | 430 | pF | ||
| Output Capacitance | Coss | 42 | pF | |||
| Reverse transfer Capacitance | Crss | 6 | pF | |||
| Turn-on Delay Time | Td(on) | VDD=300V, ID =3.0A RG=25 | 10 | ns | ||
| Rise Time | Tr | 9 | ns | |||
| Turn -Off Delay Time | Td(off) | 35 | ns | |||
| Fall Time | Tf | 10 | ns | |||
| Total Gate Charge | Qg | ID =3.0A, VDS = 480V VGS = 10V | 10.9 | nC | ||
| Gate-to-Source Charge | Qgs | 3.4 | nC | |||
| Gate-to-Drain Charge | Qg d | 1.7 | nC | |||
| Continuous Diode Forward Current | IS | 3.0 | A | |||
| Max Pulsed Diode Forward Current | ISM | 12 | A | |||
| Diode Forward Voltage | VSD | Tj=25C, Is=3.0A,VGS =0V | 1.4 | V | ||
| Reverse Recovery Time | trr | Tj=25C, If=3.0A di/dt=100A/s | 84.6 | ns | ||
| Reverse Recovery Charge | Qrr | 0.2 | uC | |||
| Junction-to-case Thermal Resistance | RthJC | 2.31 | /W | |||
| Junction-to-ambient Thermal Resistance | RthJA | 62.5 | /W |
2412111207_Fortior-Tech-FMD3N60E5_C41407041.pdf
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