FM 3401S C P Channel Power MOSFET Featuring High Current and Power Dissipation in SOT 23 Package
Key Attributes
Model Number:
3401S/C
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
2.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
206mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
83pF
Number:
1 P-Channel
Output Capacitance(Coss):
134pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
1.021nF
Gate Charge(Qg):
9.2nC@4.5V
Mfr. Part #:
3401S/C
Package:
SOT-23
Product Description
Product Overview
The 3401S/C is a P-Channel Trench Power MOSFET from Fine Made Microelectronics Group Co., Ltd. It offers high power and current handling capability, making it suitable for applications such as PWM, load switching, and power management. This lead-free product is available in a surface mount SOT-23 package.
Product Attributes
- Brand: FINE MADE MICROELECTRONICS GROUP CO., LTD.
- Model: 3401S/C
- File Number: S&CIC1950
- Certifications: Lead Free Product is Acquired
- Package: SOT-23
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | |||||
| VDSS | Drain-Source Voltage | - | - | -30 | V |
| VGSS | Gate-Source Voltage | - | - | 12 | V |
| ID | Continuous Drain Current (TC=25) | - | - | -2.6 | A |
| ID | Continuous Drain Current (TC=100) | - | - | -2.0 | A |
| PD | Power Dissipation (TC=25) | - | - | 1.2 | W |
| RJA | Thermal Resistance, Junction to Ambient | - | 115 | - | /W |
| TJ, TSTG | Operating and Storage Temperature Range | -55 | - | +150 | |
| Electrical Characteristics | |||||
| V(BR)DSS | Drain-Source Breakdown Voltage (VGS=0V,ID= -250A) | -30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current (VDS = -24V, VGS = 0V) | - | - | -1 | A |
| IGSS | Gate to Body Leakage Current (VDS =0V, VGS = 10V) | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage (VDS= VGS, ID= -250A) | -0.4 | -0.7 | -1.3 | V |
| RDS(on) | Static Drain-Source on-Resistance (VGS =-10V, ID =-2.6A) | - | 98 | 130 | m |
| Static Drain-Source on-Resistance (VGS =-4.5V, ID =-2A) | - | 120 | 180 | m | |
| Static Drain-Source on-Resistance (VGS =-2.5V, ID =-1A) | - | 150 | 206 | m | |
| gFS | Forward Transconductance (VDS =-5V, ID = -2.6A) | - | 6 | - | S |
| Dynamic Characteristics | |||||
| Ciss | Input Capacitance (VDS = -15V, VGS = 0V, f = 1.0MHz) | - | 1021 | - | pF |
| Coss | Output Capacitance | - | 134 | - | pF |
| Crss | Reverse Transfer Capacitance | - | 83 | - | pF |
| Qg | Total Gate Charge (VDS= -15V, ID = -2.6A, VGS = -4.5V) | - | 9.2 | - | nC |
| Qgs | Gate-Source Charge | - | 2.1 | - | nC |
| Qgd | Gate-Drain (Miller) Charge | - | 3.3 | - | nC |
| Switching Characteristics | |||||
| td(on) | Turn-on Delay Time (VDD = -15V, ID = -2.6A, VGS =-10V, RGEN=6) | - | 9 | - | ns |
| tr | Turn-on Rise Time | - | 5 | - | ns |
| td(off) | Turn-off Delay Time | - | 36 | - | ns |
| tf | Turn-off Fall Time | - | 16 | - | ns |
| Drain-Source Diode Characteristics | |||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | -2.6 | A |
| VSD | Drain to Source Diode Forward Voltage (VGS = 0V, IS = -2.6A) | - | - | -1.2 | V |
2411121101_FM-3401S-C_C2932004.pdf
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