High current Fuji Electric FGZ75XS65C Discrete IGBT for rugged inverter welding machine applications
Key Attributes
Model Number:
FGZ75XS65C
Product Custom Attributes
Mfr. Part #:
FGZ75XS65C
Package:
TO-247-4-P2
Product Description
Product Overview
The FGZ75XS65C is a Discrete IGBT from Fuji Electric's XS-series, designed for high reliability and ruggedness. It offers low power loss, reduced switching surge and noise, making it suitable for demanding applications such as uninterruptible power supplies, PV power conditioners, and inverter welding machines.
Product Attributes
- Brand: Fuji Electric
- Series: XS-series
- Product Type: Discrete IGBT
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit | Remarks |
| Maximum Ratings and Characteristics | |||||||
| Collector-Emitter Voltage | VCES | 650 | V | ||||
| Gate-Emitter Voltage | VGES | ±20 | V | ||||
| Transient Gate-Emitter Voltage | tp < 1 µs | ±30 | V | ||||
| DC Collector Current | IC@25 | TC = 25 °C | 115 | A | |||
| DC Collector Current | IC@100 | TC = 100 °C | 75 | A | |||
| Pulsed Collector Current | ICP | 300 | A | Note *1 | |||
| Turn-Off Safe Operating Area | VCE ≤ 650 V, Tvj ≤ 175 °C | -300 | A | ||||
| Diode Forward Current | IF@25 | TC = 25 °C | 118 | A | |||
| Diode Forward Current | IF@100 | TC = 100 °C | 75 | A | |||
| Diode Pulsed Current | IFP | 300 | A | Note *1 | |||
| IGBT Max. Power Dissipation | Ptot_IGBT | TC = 25 °C | 437 | W | |||
| FWD Max. Power Dissipation | Ptot_FWD | TC = 25 °C | 327 | W | |||
| Operating Junction Temperature | Tvj | -40 | +175 | °C | |||
| Storage Temperature | Tstg | -55 | +175 | °C | |||
| Electrical Characteristics | |||||||
| Zero Gate Voltage Collector Current | ICES | VCE = 650 V, VGE = 0 V, Tvj = 25 °C | - | - | 250 | µA | |
| Zero Gate Voltage Collector Current | ICES | VCE = 650 V, VGE = 0 V, Tvj = 175 °C | - | - | 2 | mA | |
| Gate-Emitter Leakage Current | IGES | VCE = 0 V, VGE = ±20 V | - | - | 200 | nA | |
| Gate-Emitter Threshold Voltage | VGE(th) | VCE = 20 V, IC = 75 mA | 3.4 | 4.0 | 4.6 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 75 A, Tvj = 25 °C | - | 1.35 | 1.70 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 75 A, Tvj = 125 °C | - | 1.50 | - | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 75 A, Tvj = 175 °C | - | 1.60 | - | V | |
| Input Capacitance | Cies | VCE = 25 V, VGE = 0 V, f = 1 MHz | - | 5940 | - | pF | |
| Output Capacitance | Coes | - | 134 | - | pF | ||
| Reverse Transfer Capacitance | Cres | - | 60 | - | pF | ||
| Gate Charge | QG | VCC = 520 V, IC = 75 A, VGE = 15 V | - | 300 | - | nC | |
| Turn-On Delay Time | td(on) | Tvj= 25 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | - | 45 | - | ns | Energy loss include “tail” and FWD reverse recovery. |
| Rise Time | tr | - | 21 | - | ns | ||
| Turn-Off Delay Time | td(off) | - | 340 | - | ns | ||
| Fall Time | tf | - | 21 | - | ns | ||
| Turn-On Energy | Eon | - | 0.50 | - | mJ | ||
| Turn-Off Energy | Eoff | - | 0.74 | - | mJ | ||
| Turn-On Delay Time | td(on) | Tvj = 150 °C, VCC = 400 V, IC = 37.5 A, VGE = 15 V, RG = 10 Ω | - | 50 | - | ns | Energy loss include “tail” and FWD reverse recovery. |
| Rise Time | tr | - | 25 | - | ns | ||
| Turn-Off Delay Time | td(off) | - | 380 | - | ns | ||
| Fall Time | tf | - | 32 | - | ns | ||
| Turn-On Energy | Eon | - | 0.80 | - | mJ | ||
| Turn-Off Energy | Eoff | - | 1.00 | - | mJ | ||
| Forward Voltage Drop | VF | IF = 75 A, Tvj = 25 °C | - | 1.70 | 2.15 | V | |
| Forward Voltage Drop | VF | IF = 75 A, Tvj = 125 °C | - | 1.78 | - | V | |
| Forward Voltage Drop | VF | IF = 75 A, Tvj = 175 °C | - | 1.78 | - | V | |
| Diode Reverse Recovery Time | trr | VCC = 400 V, IF = 37.5 A, -diF/dt = 1500 A/µs, Tvj = 25 °C | - | 88 | - | ns | |
| Diode Reverse Recovery Charge | Qrr | - | 2.50 | - | µC | ||
| Diode Reverse Recovery Time | trr | VCC = 400 V, IF = 37.5 A, -diF/dt = 1400 A/µs, Tvj = 150 °C | - | 96 | - | ns | |
| Diode Reverse Recovery Charge | Qrr | - | 3.1 | - | µC | ||
| Thermal Resistance | |||||||
| Thermal Resistance, Junction-Ambient | Rth(j-a) | - | - | 50 | °C/W | ||
| Thermal Resistance, IGBT Junction to Case | Rth(j-c)_IGBT | - | - | 0.343 | °C/W | ||
| Thermal Resistance, FWD Junction to Case | Rth(j-c)_FWD | - | - | 0.459 | °C/W | ||
2511211130_Fuji-Electric-FGZ75XS65C_C29799850.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
