Glass passivated SCR FUXINSEMI KC5FB60HR ideal for ignition circuits lighting ballasts and logic circuit drives
Product Overview
The KC5FB60HR is a glass-passivated, very sensitive gate Silicon Controlled Rectifier (SCR) designed for ignition and protection circuits. It features a high blocking voltage capability and a glass-passivated surface for enhanced reliability and uniformity. This SCR is ideal for applications such as ignition circuits, switched-mode power supplies, lighting ballasts, and logic circuit drives.
Product Attributes
- Brand: Fuxin Semiconductor (implied by www.fuxinsemi.com)
- Package Type: TO-252 (DPAK)
- Material: Glass Passivated Silicon
Technical Specifications
| Symbol | Parameter | Conditions | Value | Unit | ||
| IT(RMS) | On-state RMS current | 8 | A | |||
| VDRM/VRRM | Repetitive peak off-state voltage | 600 | V | |||
| IGT | Gate trigger current | VD=12V,RL=140, Fig. 6 | 200 | A | ||
| IT(AV) | Average On-state current | half sine wave,Tc90 | 5 | A | ||
| ITSM | Non repetitive peak on-state current | half sine wave, Tj(init)=25, tp=10ms | 70 | A | ||
| I2t | I2t value for fusing | tp=10ms, sine wave pulse | 25 | As | ||
| dIT/dt | Critical rate of rise of on-state current | IG=2*IGT, tr10ns, Tj=110 | 50 | A/s | ||
| IGM | Peak gate current | tp=20s, Tj=110 | 3 | A | ||
| PGM | Peak gate power | tp=20s, Tj=110 | 4 | W | ||
| PG(AV) | Average gate power | Tj=110 | 1 | W | ||
| Tstg | Storage temperature | -40 to +150 | ||||
| Tj | Operating junction temperature range | -40 to +110 | ||||
| IGT | Gate trigger current | VD=12V,RL=140, Fig. 6 | - | 200 | A | |
| VGT | Gate trigger voltage | VD=12V,RL=140,Tj=25 | - | 0.8 | V | |
| VGD | Gate non-trigger voltage | VD=VDRM,RGK=1k, RL=3.3k,Tj=110 | 0.2 | - | - | V |
| IH | Holding current | IT=50mA, RGK=1k, Tj=25,Fig. 6 | - | 5 | mA | |
| IL | Latching current | - | 6 | mA | ||
| dVD/dt | Critical rate of rise of off-state voltage | VD=2/3VDRM, RGK=1k,Tj=110 | 10 | - | - | V/s |
| VTM | Peak on-state voltage | ITM=8Atp=380s, Fig. 4 | - | 1.55 | V | |
| IDRM / IRRM | Peak forward reverse blocking current | VD=VDRM/VRRM, Tj=25 | - | 10 | A | |
| IDRM / IRRM | Peak forward reverse blocking current | VD=VDRM/VRRM,Tj=110 | - | 1 | mA | |
| Rth(j-c)AC | Junction to case(AC) | TO-252 | 2 | /W | ||
| Rth(j-a) | Junction to ambient | S=0.5cm TO-252 | 70 | /W |
2504101957_FUXINSEMI-KC5FB60HR_C44606250.pdf
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