Glass passivated SCR FUXINSEMI KC5FB60HR ideal for ignition circuits lighting ballasts and logic circuit drives

Key Attributes
Model Number: KC5FB60HR
Product Custom Attributes
Holding Current (Ih):
5mA
Current - Gate Trigger(Igt):
200uA
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
8A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
70A
SCR Type:
1 SCR
Operating Temperature:
-40℃~+110℃
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
KC5FB60HR
Package:
TO-252
Product Description

Product Overview

The KC5FB60HR is a glass-passivated, very sensitive gate Silicon Controlled Rectifier (SCR) designed for ignition and protection circuits. It features a high blocking voltage capability and a glass-passivated surface for enhanced reliability and uniformity. This SCR is ideal for applications such as ignition circuits, switched-mode power supplies, lighting ballasts, and logic circuit drives.

Product Attributes

  • Brand: Fuxin Semiconductor (implied by www.fuxinsemi.com)
  • Package Type: TO-252 (DPAK)
  • Material: Glass Passivated Silicon

Technical Specifications

SymbolParameterConditionsValueUnit
IT(RMS)On-state RMS current8A
VDRM/VRRMRepetitive peak off-state voltage600V
IGTGate trigger currentVD=12V,RL=140, Fig. 6200A
IT(AV)Average On-state currenthalf sine wave,Tc905A
ITSMNon repetitive peak on-state currenthalf sine wave, Tj(init)=25, tp=10ms70A
I2tI2t value for fusingtp=10ms, sine wave pulse25As
dIT/dtCritical rate of rise of on-state currentIG=2*IGT, tr10ns, Tj=11050A/s
IGMPeak gate currenttp=20s, Tj=1103A
PGMPeak gate powertp=20s, Tj=1104W
PG(AV)Average gate powerTj=1101W
TstgStorage temperature-40 to +150
TjOperating junction temperature range-40 to +110
IGTGate trigger currentVD=12V,RL=140, Fig. 6-200A
VGTGate trigger voltageVD=12V,RL=140,Tj=25-0.8V
VGDGate non-trigger voltageVD=VDRM,RGK=1k, RL=3.3k,Tj=1100.2--V
IHHolding currentIT=50mA, RGK=1k, Tj=25,Fig. 6-5mA
ILLatching current-6mA
dVD/dtCritical rate of rise of off-state voltageVD=2/3VDRM, RGK=1k,Tj=11010--V/s
VTMPeak on-state voltageITM=8Atp=380s, Fig. 4-1.55V
IDRM / IRRMPeak forward reverse blocking currentVD=VDRM/VRRM, Tj=25-10A
IDRM / IRRMPeak forward reverse blocking currentVD=VDRM/VRRM,Tj=110-1mA
Rth(j-c)ACJunction to case(AC)TO-2522/W
Rth(j-a)Junction to ambientS=0.5cm TO-25270/W

2504101957_FUXINSEMI-KC5FB60HR_C44606250.pdf

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