Metal silicon junction Schottky barrier rectifier FUXINSEMI SS54B with loss and halogen free option

Key Attributes
Model Number: SS54B
Product Custom Attributes
Reverse Leakage Current (Ir):
-
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
550mV@5A
Current - Rectified:
5A
Mfr. Part #:
SS54B
Package:
SMB(DO-214AA)
Product Description

Product Overview

The SS52B THRU SS520B A series are surface mount Schottky barrier rectifiers designed for a wide range of applications with voltage ratings from 20V to 200V. These rectifiers feature a metal silicon junction and majority carrier conduction, resulting in low power loss and high efficiency. Built-in strain relief makes them ideal for automated placement. They offer high forward surge current capability and are guaranteed for high-temperature soldering at 260C for 10 seconds at the terminals. These devices are compliant with RoHS 2.0 and are available in a Halogen-free option (suffix "-H"). The plastic package carries an Underwriters Laboratory Flammability Classification 94V-0.

Product Attributes

  • Brand: Fuxinsemi
  • Package Type: SMB/DO-214AA
  • Material: Metal silicon junction
  • Conduction Type: Majority carrier conduction
  • Certifications: RoHS 2.0 compliant, Underwriters Laboratory Flammability Classification 94V-0
  • Optional Feature: Halogen-free (suffix "-H")

Technical Specifications

Symbol Units SS52B SS53B SS54B SS55B SS56B SS58B SS510B SS515B SS520B
VRRM (Max. repetitive peak reverse voltage) V 20 30 40 50 60 80 100 150 200
VRMS (Max. RMS voltage) V 14 21 28 35 42 56 70 105 140
VDC (Max. DC blocking voltage) V 20 30 40 50 60 80 100 150 200
I(AV) (Max. average forward rectified current at TL) A 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0
IFSM (Peak forward surge current 8.3ms single half sine-wave) A 150.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0
VF (Max. instantaneous forward voltage at 5.0A) V 0.70 0.70 0.70 0.70 0.70 0.70 0.70 0.70 0.70
IR (Max. DC reverse current at rated DC blocking voltage) TA=25C mA 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5
IR (Max. DC reverse current at rated DC blocking voltage) TA=100C mA 10.0 10.0 10.0 10.0 10.0 10.0 10.0 10.0 10.0
CJ (Typical junction capacitance NOTE 1) pF 50 50 50 50 50 50 50 50 50
RJA (Typical thermal resistance NOTE 2) C/W 50 50 50 50 50 50 50 50 50
TJ, TSTG (Operating junction and storage temperature range) C -55 to +150

Note 1: Measured at 1MHz and applied reverse voltage of 4.0V D.C.

Note 2: P.C.B. mounted with 2.0x2.0 (5.0x5.0cm) copper pad areas

Package Dimensions (SMB/DO-214AA)

Dimension Inches (mm)
A 0.183 (4.65) - 0.160 (4.05)
B 0.155 (3.94) - 0.130 (3.30)
C 0.086 (2.20) - 0.071 (1.80)
D (0.060 (1.52) - 0.030 (0.76)) (Included in A)
E (0.219 (5.56) - 0.202 (5.14)) (Included in A)
F (0.012 (0.305) - 0.006 (0.152)) (Included in B)
G (0.008 (0.203) MAX.) (Included in B)
H (0.096 (2.45) - 0.081 (2.05)) (Included in C)

# Marking Code

Type Number Marking Code
SS52B SS52
SS53B SS53
SS54B SS54
SS55B SS55
SS56B SS56
SS58B SS58
SS510B SS510
SS515B SS515
SS520B SS520

Soldering Conditions

Suggested thermal profiles for soldering processes:

  • Storage environment: Temperature=5~40C, Humidity=55%25%
  • Reflow soldering of surface-mount devices:
    • Average ramp-up rate(Tsmin to Tsmax): <3C/sec
    • Preheat Temperature (Tsmin): 150C
    • Preheat Temperature (Tsmax): 200C
    • Preheat Time (ts): 60~120sec
    • Ramp-up Rate (Tsmax to Tp): <3C/sec
    • Time maintained above: Temperature (TL): 217C
    • Time maintained above: Time (tL): 60~260sec
    • Peak Temperature (Tp): 255C 0/+5C
    • Time within 5C of actual Peak Temperature (tp): 10~30sec
    • Ramp-down Rate: <6C/sec
    • Time 25C to Peak Temperature: <6minutes

2010271836_FUXINSEMI-SS54B_C908243.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.