Metal silicon junction Schottky barrier rectifier FUXINSEMI SS54B with loss and halogen free option
Product Overview
The SS52B THRU SS520B A series are surface mount Schottky barrier rectifiers designed for a wide range of applications with voltage ratings from 20V to 200V. These rectifiers feature a metal silicon junction and majority carrier conduction, resulting in low power loss and high efficiency. Built-in strain relief makes them ideal for automated placement. They offer high forward surge current capability and are guaranteed for high-temperature soldering at 260C for 10 seconds at the terminals. These devices are compliant with RoHS 2.0 and are available in a Halogen-free option (suffix "-H"). The plastic package carries an Underwriters Laboratory Flammability Classification 94V-0.
Product Attributes
- Brand: Fuxinsemi
- Package Type: SMB/DO-214AA
- Material: Metal silicon junction
- Conduction Type: Majority carrier conduction
- Certifications: RoHS 2.0 compliant, Underwriters Laboratory Flammability Classification 94V-0
- Optional Feature: Halogen-free (suffix "-H")
Technical Specifications
| Symbol | Units | SS52B | SS53B | SS54B | SS55B | SS56B | SS58B | SS510B | SS515B | SS520B |
|---|---|---|---|---|---|---|---|---|---|---|
| VRRM (Max. repetitive peak reverse voltage) | V | 20 | 30 | 40 | 50 | 60 | 80 | 100 | 150 | 200 |
| VRMS (Max. RMS voltage) | V | 14 | 21 | 28 | 35 | 42 | 56 | 70 | 105 | 140 |
| VDC (Max. DC blocking voltage) | V | 20 | 30 | 40 | 50 | 60 | 80 | 100 | 150 | 200 |
| I(AV) (Max. average forward rectified current at TL) | A | 5.0 | 5.0 | 5.0 | 5.0 | 5.0 | 5.0 | 5.0 | 5.0 | 5.0 |
| IFSM (Peak forward surge current 8.3ms single half sine-wave) | A | 150.0 | 150.0 | 150.0 | 150.0 | 150.0 | 150.0 | 150.0 | 150.0 | 150.0 |
| VF (Max. instantaneous forward voltage at 5.0A) | V | 0.70 | 0.70 | 0.70 | 0.70 | 0.70 | 0.70 | 0.70 | 0.70 | 0.70 |
| IR (Max. DC reverse current at rated DC blocking voltage) TA=25C | mA | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 |
| IR (Max. DC reverse current at rated DC blocking voltage) TA=100C | mA | 10.0 | 10.0 | 10.0 | 10.0 | 10.0 | 10.0 | 10.0 | 10.0 | 10.0 |
| CJ (Typical junction capacitance NOTE 1) | pF | 50 | 50 | 50 | 50 | 50 | 50 | 50 | 50 | 50 |
| RJA (Typical thermal resistance NOTE 2) | C/W | 50 | 50 | 50 | 50 | 50 | 50 | 50 | 50 | 50 |
| TJ, TSTG (Operating junction and storage temperature range) | C | -55 to +150 | ||||||||
Note 1: Measured at 1MHz and applied reverse voltage of 4.0V D.C.
Note 2: P.C.B. mounted with 2.0x2.0 (5.0x5.0cm) copper pad areas
Package Dimensions (SMB/DO-214AA)
| Dimension | Inches (mm) |
|---|---|
| A | 0.183 (4.65) - 0.160 (4.05) |
| B | 0.155 (3.94) - 0.130 (3.30) |
| C | 0.086 (2.20) - 0.071 (1.80) |
| D (0.060 (1.52) - 0.030 (0.76)) | (Included in A) |
| E (0.219 (5.56) - 0.202 (5.14)) | (Included in A) |
| F (0.012 (0.305) - 0.006 (0.152)) | (Included in B) |
| G (0.008 (0.203) MAX.) | (Included in B) |
| H (0.096 (2.45) - 0.081 (2.05)) | (Included in C) |
# Marking Code
| Type Number | Marking Code |
|---|---|
| SS52B | SS52 |
| SS53B | SS53 |
| SS54B | SS54 |
| SS55B | SS55 |
| SS56B | SS56 |
| SS58B | SS58 |
| SS510B | SS510 |
| SS515B | SS515 |
| SS520B | SS520 |
Soldering Conditions
Suggested thermal profiles for soldering processes:
- Storage environment: Temperature=5~40C, Humidity=55%25%
- Reflow soldering of surface-mount devices:
- Average ramp-up rate(Tsmin to Tsmax): <3C/sec
- Preheat Temperature (Tsmin): 150C
- Preheat Temperature (Tsmax): 200C
- Preheat Time (ts): 60~120sec
- Ramp-up Rate (Tsmax to Tp): <3C/sec
- Time maintained above: Temperature (TL): 217C
- Time maintained above: Time (tL): 60~260sec
- Peak Temperature (Tp): 255C 0/+5C
- Time within 5C of actual Peak Temperature (tp): 10~30sec
- Ramp-down Rate: <6C/sec
- Time 25C to Peak Temperature: <6minutes
2010271836_FUXINSEMI-SS54B_C908243.pdf
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