Detailed performance data of FUXINSEMI MCR100-8-23 covering surge peak on state current and power dissipation
Key Attributes
Model Number:
MCR100-8-23
Product Custom Attributes
Holding Current (Ih):
5mA
Current - Gate Trigger(Igt):
200uA
Voltage - On State(Vtm):
1.7V
Average Gate Power Dissipation (PG(AV)):
100mW
Current - On State(It(RMS)):
800mA
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
8A@50Hz
SCR Type:
-
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
MCR100-8-23
Package:
SOT-23(TO-236)
Product Description
Product Overview
This product provides technical data related to surge peak on-state current, on-state characteristics, power dissipation, RMS on-state current, and non-repetitive surge peak on-state current. It also details variations of gate trigger current, holding current, and latching current with junction temperature.
Technical Specifications
| Parameter | Description | Conditions | Values |
| Surge Peak On-State Current | FIG.3: Surge peak on-state current versus number of cycles | Number of cycles | 1, 10, 100, 1000 |
| On-State Characteristics | FIG.4: On-state characteristics (maximum values) | Tj=25, Tj=Tjmax, One cycle, tp=10ms | ITSM (A), ITM (A), VTM (V) |
| Maximum Power Dissipation | FIG.1 Maximum power dissipation versus RMS on-state current | =180 | P(W), IT(RMS) (A) |
| RMS On-State Current | FIG.2: RMS on-state current versus case temperature | Tc () | IT(RMS) (A) |
| Non-Repetitive Surge Peak On-State Current | FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of It | tp(ms) | ITSM (A), It (As) |
| Relative Variations of Gate Trigger Current, Holding Current and Latching Current | FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature | Tj() | IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25) |
2409280101_FUXINSEMI-MCR100-8-23_C2984760.pdf
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